Call Number (LC) | Title | Results |
---|---|---|
E 1.99: conf-970709-- | Probing the CORE of the Haldane conjecture | 1 |
E 1.99:CONF-970709-- |
B-Parameters of 4-Fermion Operators from Lattice QCD Improving the staggered quark action to reduce flavor symmetry violations Advances in the determination of quark masses Spectroscopy of B{sub s} and D{sub s} mesons Resolving exceptional configurations Topology, fermionic zero modes and flavor singlet correlators in finite temperature QCD The Charm Quark̀s Mass |
7 |
E 1.99:CONF-970710-- |
ICPEAC XX A Retro- and Pro-Spective Analysis. Calculations on Electron Capture in Low Energy Ion-Molecule Collisions Studying Atomic Dynamics with Designer Pulses Resonance Interference and Absolute Cross Sections in Near-Threshold Electron-Impact Excitation of Multicharged Ions Electron collisions with coherently prepared atomic targets |
5 |
E 1.99:CONF-970710--1 | State and Angular Resolved Electron Capture in a Merged-Beams Apparatus | 1 |
E 1.99:CONF-970711-- |
Solar particle events and their radiation threats Long-term energetic-particle databases from geosynchronous and GPS orbits |
2 |
E 1.99: conf-970711--1 | Radiation hardness assurances categories for COTS technologies | 1 |
E 1.99: conf-970711--2 | Charge collection and SEU from angled ion strikes | 1 |
E 1.99: conf-970711--3 | Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors | 1 |
E 1.99: conf-970711--4 | Irradiation response of mobile protons in buried SiO₂ | 1 |
E 1.99: conf-970711--5 | Microscopic structure of E{sub {delta}}̀ center in amorphous SiO₂ A first principles quantum mechanical investigation. | 1 |
E 1.99: conf-970711--6 | Nonvolatile field effect transistors based on protons and Si/SiO₂Si structures | 1 |
E 1.99: conf-970711--7 | A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment | 1 |
E 1.99: conf-970711--8 | Radiation transport Part B Applications with examples. | 1 |
E 1.99: conf-970711--9 | Revised model of thermally stimulated current in MOS capacitors | 1 |
E 1.99: conf-970711--10 |
Radiation transport phenomena and modeling - part A Codes. Radiation transport phenomena and modeling. Part A Codes; Part B. |
2 |
E 1.99: conf-970711--11 | Single event gate rupture in thin gate oxides | 1 |
E 1.99: conf-970711--12 | Dose enhancement in a room cobalt-60 source | 1 |
E 1.99: conf-970711--13 | Latent interface traps and 1/f noise in irradiated MOS devices | 1 |
E 1.99: conf-970711--14 | Common-source TLD and RADFET characterization of Co-60, Cs-137, and x-ray irradiation sources | 1 |
E 1.99: conf-970711--15 | Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters | 1 |