Call Number (LC) Title Results
QC611.8.C64 S46 2004eb Semiconducting chalcogenide glass I glass formation, structure, and stimulated transformations in chalcogenide glasses / 1
QC611.8.C64 S77 1989 Organometallic vapor-phase epitaxy : theory and practice / 1
QC611.8.C64 S77 1989eb Organometallic vapor phase epitaxy theory and practice / 1
QC611.8.C64 S77 1999 Organometallic vapor-phase epitaxy : theory and practice / 1
QC611.8.C64 S77 1999eb Organometallic vapor-phase epitaxy theory and practice / 1
QC611.8.C64 S955 1991 Non-stoichiometry in semiconductors : proceedings of Symposium A3 on Non-Stoichiometry in Semiconductors of the International Conference on Advanced Materials--ICAM 91, Strasbourg, France, 27-31 May, 1991 /
Non-stoichiometry in semiconductors proceedings of Symposium A3 on Non-Stoichiometry in Semiconductors of the International Conference on Advanced Materials--ICAM 91, Strasbourg, France, 27-31 May, 1991 / 		2
QC611.8.C64 T59 1992 Compound semiconductor device physics /
Compound semiconductor device physics 		2
QC611.8.C64 T66 2019eb Quaternary Alloys Based on III-V Semiconductors / 1
QC611.8.D53 D53 1994 Diamond-film semiconductors, 27-28 January 1994, Los Angeles, California /
Diamond-film semiconductors 27-28 January 1994, Los Angeles, California / 		2
QC611.8.D66 Rare earth and transition metal doping of semiconductor materials synthesis, magnetic properties and room temperature spintronics /
Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics /
Heavily-doped 2D-quantized structures and the Einstein relation / 		4
QC611.8.D66 H33 1993a Infrared absorption in doped semiconductors due to direct intersubband transitions / 1
QC611.8.D66 P76 1993 Properties of doped semiconducting materials / 1
QC611.8.D66 S5513 1984 Electronic properties of doped semiconductors / 2
QC611.8.G3 A3 1994 GaAs and related materials : bulk semiconducting and superlattice properties / 1
QC611.8.G3 A33 1992 Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / 1
QC611.8.G3 B33 2005 Fabrication of GaAs devices / 1
QC611.8.G3 B33 2009eb Fabrication of GaAs devices 1
QC611.8.G3 I57 Gallium arsenide : proceedings of the international symposium organized by the Institute of Physics and the Physical Society in co-operation with the Avionics Laboratory of the U.S. Air Force.
Gallium arsenide and related compounds : papers from the ... International Symposium on Gallium Arsenide and Related Compounds.
Compound semiconductors : proceedings of the ... International Symposium on Compound Semiconductors. 		3
QC611.8.G3 P76 1993b Properties of lattice-matched and strained indium gallium arsenide 1
QC611.8.G35 H54 2020eb High-frequency GaN electronic devices / 1