Call Number (LC) | Title | Results |
---|---|---|
TK7871.92 .P69 1984 | Power transistors : device design and applications / | 1 |
TK7871.92 .S48 1974 |
Semiconductor heterojunctions / Semiconductor heterojunctions |
2 |
TK7871.92 .S56 1998 | Cryogenic operation of silicon power devices / | 1 |
TK7871.92 .T6 | Junction field-effect transistors. | 1 |
TK7871.95 |
Tunnel field-effect transistors (TFET) : modelling and simulations / Carrier transport in nanoscale MOS transistors The source/drain engineering of nanoscale Germanium-based MOS devices / Tunneling field effect transistors : design, modeling and applications / Differentiated layout styles for MOSFETs : electrical behavior in harsh environments / Advanced field-effect transistors : theory and applications. RF and time-domain techniques for evaluating novel semiconductor transistors Advanced SPICE model for GaN HEMTs (ASM-HEMT) a new industry-standard compact model for GaN-based power and RF circuit design / Carrier transport in nanoscale MOS transistors / Mitigating process variability and soft errors at circuit-level for FinFETs / TFET integrated circuits : from perspective towards reality / GaN transistors for efficient power conversion / Novel three-state quantum dot gate field effect transistor : fabrication, modeling, and applications / Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor / HEMT technology and applications / Strained-Si heterostructure field effect devices / MOSFET technologies for double-pole four-throw radio-frequency switch / Reliability of high mobility SiGe channel MOSFETs for future CMOS applications / Device physics, modeling, technology, and analysis for silicon MESFET / Tunneling field effect transistor technology / FinFET modeling for IC simulation and design : using the BSIM-CMG standard / Ferroelectric-gate field effect transistor memories device physics and applications / FinFET/GAA modeling for IC simulation and design : using the BSIM-CMG standard. |
26 |
TK7871.95 .A38 2022 | Advanced indium arsenide-based HEMT architectures for terahertz applications | 2 |
TK7871.95 .A64 1995 | Electrical and thermal characterization of MESFETs, HEMTs, and HBTs / | 1 |
TK7871.95 .A76 1993 | MOSFET models for VLSI circuit simulation : theory and practice / | 1 |
TK7871.95 .A763 2007eb | Mosfet modeling for VLSI simulation : theory and practice / | 1 |
TK7871.95 -- B35 2005eb | Silicon Rf Power Mosfets. | 1 |
TK7871.95 .B35 2010 | Advanced power MOSFETs concepts | 1 |
TK7871.95 .B56 | Field-effect and bipolar power transistor physics | 1 |
TK7871.95 .C43 2013 | Fundamentals of nanoscaled field effect transistors / | 1 |
TK7871.95 .C56 1995 | Characterization methods for submicron MOSFETs / | 1 |
TK7871.95 .C57 1999 | MOSFET modeling & BSIM3 user's guide / | 1 |
TK7871.95 .C57 2002eb | MOSFET modeling & BSIM3 user's guide / | 2 |
TK7871.95 .C6 | Theory and applications of field-effect transistors / | 1 |
TK7871.95 .C7 | Mosfet in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology / | 1 |
TK7871.95 .C76 2005 | Matching properties of deep sub-micron MOS transistors / | 1 |
TK7871.95 .C76 2005eb | Matching properties of deep sub-micron MOS transistors | 1 |