Parasitic substrate coupling in high voltage integrated circuits : minority and majority carriers propagation in semiconductor substrate / Pietro Buccella, Camillo Stefanucci, Maher Kayal, Jean-Michel Sallese.

This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching...

Full description

Saved in:
Bibliographic Details
Online Access: Full Text (via Springer)
Main Authors: Buccella, Pietro (Author), Stefanucci, Camillo (Author), Kayal, Maher (Author), Sallese, Jean-Michel (Author)
Format: eBook
Language:English
Published: Cham : Springer, 2018.
Series:Analog circuits and signal processing series.
Subjects:

MARC

LEADER 00000cam a2200000Mi 4500
001 b10152114
003 CoU
005 20210611123532.5
006 m o d
007 cr |||||||||||
008 180314s2018 sz a ob 001 0 eng d
019 |a 1028979459  |a 1029225820  |a 1029318744  |a 1029443695  |a 1032363981  |a 1032603335  |a 1043628283  |a 1059031268  |a 1066644737  |a 1081134606  |a 1086531287  |a 1086553456  |a 1111036246  |a 1112858785 
020 |a 9783319743820 
020 |a 3319743821 
020 |z 9783319743813 
020 |z 3319743813 
024 7 |a 10.1007/978-3-319-74382-0 
035 |a (OCoLC)spr1029093056 
035 |a (OCoLC)1029093056  |z (OCoLC)1028979459  |z (OCoLC)1029225820  |z (OCoLC)1029318744  |z (OCoLC)1029443695  |z (OCoLC)1032363981  |z (OCoLC)1032603335  |z (OCoLC)1043628283  |z (OCoLC)1059031268  |z (OCoLC)1066644737  |z (OCoLC)1081134606  |z (OCoLC)1086531287  |z (OCoLC)1086553456  |z (OCoLC)1111036246  |z (OCoLC)1112858785 
037 |a spr978-3-319-74382-0 
040 |a AZU  |b eng  |e rda  |e pn  |c AZU  |d OCLCO  |d N$T  |d GW5XE  |d UAB  |d UPM  |d OCLCF  |d MERER  |d YDX  |d OCLCQ  |d VT2  |d OCLCQ  |d U3W  |d EBLCP  |d CNCEN  |d WYU  |d LVT  |d AU@  |d OH1  |d OCLCQ  |d UKMGB  |d CAUOI  |d OCLCQ  |d WAU  |d COO  |d UKAHL  |d OCLCQ  |d AUD  |d ADU  |d OCLCQ  |d OCL  |d OCLCO 
049 |a GWRE 
050 4 |a TK7888.4  |b .B93 2018 
100 1 |a Buccella, Pietro,  |e author. 
245 1 0 |a Parasitic substrate coupling in high voltage integrated circuits :  |b minority and majority carriers propagation in semiconductor substrate /  |c Pietro Buccella, Camillo Stefanucci, Maher Kayal, Jean-Michel Sallese. 
264 1 |a Cham :  |b Springer,  |c 2018. 
300 |a 1 online resource (xvii, 183 pages) :  |b illustrations. 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
347 |a text file  |b PDF  |2 rda. 
490 1 |a Analog Circuits and Signal Processing,  |x 1872-082X. 
505 0 |a Chapter1: Overview of Parasitic Substrate Coupling -- Chapter2: Design Challenges in High Voltage ICs -- Chapter3: Substrate Modeling with Parasitic Transistors -- Chapter4: TCAD Validation of the Model -- Chapter5: Extraction Tool for the Substrate Network -- Chapter6: Parasitic Bipolar Transistors in Benchmark Structures -- Chapter7: Substrate Coupling Analysis and Evaluation of Protection Strategies. 
504 |a Includes bibliographical references and index. 
520 |a This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific test protections. 
650 0 |a Integrated circuits. 
650 0 |a Interconnects (Integrated circuit technology) 
650 7 |a Interconnects (Integrated circuit technology)  |2 fast  |0 (OCoLC)fst00976051. 
650 7 |a Integrated circuits.  |2 fast  |0 (OCoLC)fst00975535. 
650 7 |a Electronic circuits.  |2 fast  |0 (OCoLC)fst00906874. 
650 7 |a Electronics.  |2 fast  |0 (OCoLC)fst00907538. 
650 7 |a Engineering.  |2 fast  |0 (OCoLC)fst00910312. 
650 7 |a Microelectronics.  |2 fast  |0 (OCoLC)fst01019757. 
700 1 |a Stefanucci, Camillo,  |e author. 
700 1 |a Kayal, Maher,  |e author. 
700 1 |a Sallese, Jean-Michel,  |e author. 
776 0 8 |i Printed edition:  |z 9783319743813  |w (OCoLC)1016050577. 
830 0 |a Analog circuits and signal processing series. 
856 4 0 |u https://colorado.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-319-74382-0  |z Full Text (via Springer) 
907 |a .b101521145  |b 02-14-22  |c 06-26-18 
998 |a web  |b  - -   |c f  |d b   |e -  |f eng  |g sz   |h 0  |i 1 
915 |a M 
956 |a Springer e-books 
956 |b Springer Engineering eBooks 2018 English+International 
999 f f |i 1f3b1015-2b7a-5ae2-b363-6f2ffea1c8b7  |s 18f01280-b1ce-5f72-9f28-1cd04888270e 
952 f f |p Can circulate  |a University of Colorado Boulder  |b Online  |c Online  |d Online  |e TK7888.4 .B93 2018  |h Library of Congress classification  |i Ebooks, Prospector  |n 1