Applied solid state science : advances in materials and device research / edited by Raymond Wolfe. Vol. 3.
Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the appl...
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Format: | eBook |
Language: | English |
Published: |
New York ; London :
Academic Press,
1972.
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Table of Contents:
- Front Cover; Applied Solid State Science Advances in Materials and Device Research; Copyright Page; Table of Contents; LIST OF CONTRIBUTORS; PREFACE; CONTENTS OF PREVIOUS VOLUMES; ARTICLES PLANNED FOR FUTURE VOLUMES; Chapter 1. Physics of Multilayer-Gate IGFET Memories; I. Introduction; II. IGFET Characteristics; III. Oxide Instabilities; IV. Current Transport through Insulators; V. The Memory Element; References; Chapter 2. Acousto-optics; I. Introduction; II. General Formulation; III. Strong Interaction; IV. Weak Interaction; V. Materials; VI. Applications; VII. Special Topics; Appendix A.
- III. Frequency Dependence of the Electrooptic EffectIV. Electronic Electrooptic Effect (Nonlinear Optic Effect); V. Theory of the Electrooptic Effect; VI. Tabulation of Experimental Electrooptic Data; VII. Electrooptic Device Considerations; VIII. Conclusions; List of Symbols; Note Added in Proof; Reference; AUTHOR INDEX; SUBJECT INDEX.
- Appendix ΒReferences; Chapter 3. Drift Velocity and Trapping in Semiconductors-Transient Charge Technique; I. Introduction; II. Experimental Method; III. Drift Velocity; IV. Trapping Processes; V. Overview; Appendix A. Circuit Considerations; Appendix B. Transient Response; Appendix C. Pulse Rise Time; Appendix D. Measurement of the Energy to Create a Pair in Silicon, Germanium, and CdTe; References; Chapter 4. Electrooptical and Nonlinear Optical Properties of Crystals; I. Introduction; II. Phenomenological Description of Electrooptic Phenomena.