Active Gate Current Control for Non-Insulating-Gate WBG Devices [electronic resource]
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| Online Access: |
Full Text (via OSTI) |
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
Oak Ridge, Tenn. :
Distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2019.
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| Subjects: |
| Abstract: | Abstract ? This paper proposes an Active Gate Current Control (AGCC) strategy for non-insulating gate WBG devices, for example, gallium nitride gate-injection-transistor (GaN-GIT) and silicon carbide super junction transistor (SiC-SJT). It provides a tool for power converter designers to further improve the converter efficiency and to extend the life time of those higher cost power transistors. By continuously adjusting the device gate current, the proposed AGCC strategy can control the device switching speed, switching loss, conduction loss and gate loss together to achieve operation goals, including lower semiconductor loss, lower thermal stress, lower EMI spectrum, or smaller voltage overshoot across the full range. |
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| Item Description: | Published through Scitech Connect. 10/15/2019. "Other: 6142926119" Wang, Jin ; THE OHIO STATE UNIVERSITY. USDOE Office of Energy Efficiency and Renewable Energy (EERE) USDOE Office of Science and Technology (ST) |
| Physical Description: | Medium: ED : digital, PDF file. |