Applications of silicon-germanium heterostructure devices [electronic resource] / C.K. Maiti and G.A. Armstrong.
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book...
Saved in:
| Online Access: |
Full Text (via Taylor & Francis) |
|---|---|
| Main Author: | |
| Other Authors: | |
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Bristol :
Institute of Physics Pub.,
©2001.
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| Series: | Series in optics and optoelectronics.
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| Subjects: |
MARC
| LEADER | 00000cam a2200000xa 4500 | ||
|---|---|---|---|
| 001 | b11531998 | ||
| 003 | CoU | ||
| 005 | 20210115100351.1 | ||
| 006 | m o d | ||
| 007 | cr ||||||||||| | ||
| 008 | 040105s2001 enka ob 001 0 eng d | ||
| 019 | |a 171128412 |a 276798456 |a 647595697 |a 810038818 | ||
| 020 | |a 0585488290 |q (electronic bk.) | ||
| 020 | |a 9780585488295 |q (electronic bk.) | ||
| 020 | |a 9781420034691 | ||
| 020 | |a 1420034693 | ||
| 020 | |a 9780750307239 | ||
| 020 | |a 0750307234 | ||
| 020 | |z 0750307234 |q (Cloth) | ||
| 035 | |a (OCoLC)tfe53976716 | ||
| 035 | |a (OCoLC)53976716 |z (OCoLC)171128412 |z (OCoLC)276798456 |z (OCoLC)647595697 |z (OCoLC)810038818 | ||
| 037 | |a tfe9780429142727 | ||
| 040 | |a N$T |b eng |e pn |c N$T |d OCLCQ |d YDXCP |d OCLCQ |d CAI |d E7B |d IDEBK |d OCLCQ |d DEBSZ |d COO |d CRCPR |d OCLCQ |d OCLCO |d OCLCF |d OCLCQ |d UAB |d OCLCQ |d NLE |d UKMGB |d YDX |d TYFRS |d LEAUB |d UKAHL | ||
| 049 | |a GWRE | ||
| 050 | 4 | |a TK7871.96.B55 |b M35 2001eb | |
| 100 | 1 | |a Maiti, C. K. |0 http://id.loc.gov/authorities/names/nb99178877 |1 http://isni.org/isni/0000000117632280. | |
| 245 | 1 | 0 | |a Applications of silicon-germanium heterostructure devices |h [electronic resource] / |c C.K. Maiti and G.A. Armstrong. |
| 260 | |a Bristol : |b Institute of Physics Pub., |c ©2001. | ||
| 300 | |a 1 online resource (xv, 401 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 490 | 1 | |a Series in optics and optoelectronics. | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Introduction; Film Growth and Material Parameters; Principles of SiGe-HBTs; Design of SiGe-HBTs; Simulation of SiGe-HBTs; Strained-Si Heterostructure FETs; SiGe Heterostructure Schottky Diodes; SiGe Optoelectronic Devices; RF Applications of SiGe-HBTs. | |
| 520 | 8 | |a The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace. | |
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Heterostructures. |0 http://id.loc.gov/authorities/subjects/sh94002249. | |
| 650 | 0 | |a Optoelectronic devices. |0 http://id.loc.gov/authorities/subjects/sh85095200. | |
| 650 | 0 | |a Silicon crystals. |0 http://id.loc.gov/authorities/subjects/sh85122523. | |
| 650 | 0 | |a Germanium crystals. |0 http://id.loc.gov/authorities/subjects/sh85054456. | |
| 650 | 7 | |a Germanium crystals. |2 fast |0 (OCoLC)fst00942089. | |
| 650 | 7 | |a Heterostructures. |2 fast |0 (OCoLC)fst00955801. | |
| 650 | 7 | |a Optoelectronic devices. |2 fast |0 (OCoLC)fst01046908. | |
| 650 | 7 | |a Silicon crystals. |2 fast |0 (OCoLC)fst01118668. | |
| 700 | 1 | |a Armstrong, G. A. |0 http://id.loc.gov/authorities/names/nb99092143 |1 http://isni.org/isni/0000000043216187. | |
| 776 | 0 | 8 | |i Print version: |a Maiti, C.K. |t Applications of silicon-germanium heterostructure devices. |d Bristol : Institute of Physics Pub., ©2001 |z 0750307234 |w (OCoLC)46908427. |
| 830 | 0 | |a Series in optics and optoelectronics. |0 http://id.loc.gov/authorities/names/no2002017483. | |
| 856 | 4 | 0 | |u https://colorado.idm.oclc.org/login?url=https://www.taylorfrancis.com/books/9780429142727 |z Full Text (via Taylor & Francis) |
| 907 | |a .b115319980 |b 10-19-21 |c 01-22-21 | ||
| 998 | |a web |b 04-08-21 |c b |d b |e - |f eng |g enk |h 0 |i 1 | ||
| 907 | |a .b115319980 |b 10-19-21 |c 01-22-21 | ||
| 907 | |a .b115319980 |b 05-03-21 |c 01-22-21 | ||
| 907 | |a .b115319980 |b 04-08-21 |c 01-22-21 | ||
| 944 | |a MARS - RDA ENRICHED | ||
| 915 | |a I | ||
| 956 | |a Taylor & Francis eBooks | ||
| 956 | |b Taylor & Francis All eBooks | ||
| 999 | f | f | |i 5132a2d9-17bb-5fd3-ba65-2463f2472c75 |s 2c1d0c56-b296-5462-8415-fe0608347822 |
| 952 | f | f | |p Can circulate |a University of Colorado Boulder |b Online |c Online |d Online |e TK7871.96.B55 M35 2001eb |h Library of Congress classification |i web |n 1 |