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Power electronics, drives, and advanced applications / Vinod Kumar, Ranjan Kumar Behera, Dheeraj Joshi, Ramesh Bansal.

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Concern for reliable power supply and energy-efficient system design has led to usage of power electronics-based systems, including efficient electric power conversion and power semiconductor devices. This book provides integration of complete fundamental theory, design, simulation and application o...

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Bibliographic Details
Online Access: Full Text (via Taylor & Francis)
Main Authors: Kumar, Vinod (Assistant Professor) (Author), Kumar Behera, Ranjan (Author), Joshi, Dheeraj (Author), Bansal, Ramesh (Author)
Format: eBook
Language:English
Published: Boca Raton, FL : CRC Press, [2020]
Subjects:
MATLAB.
SIMULINK.
Power electronics.
Power semiconductors.
Table of Contents:
  • Cover
  • Half Title
  • Title Page
  • Copyright Page
  • Table of Contents
  • Preface
  • Acknowledgment
  • Authors
  • SECTION I: Power Semiconductor Devices
  • Chapter 1: Overview of Power Electronics
  • 1.1 Introduction
  • 1.2 Power Electronics Systems
  • 1.3 Power Semiconductor Devices
  • 1.4 Power Electronic Converters
  • 1.5 Power Electronic Modules
  • 1.6 Applications of Power Electronics
  • 1.7 Computer Simulation of Power Electronic Circuits
  • 1.7.1 Importance of Simulation
  • 1.7.2 Benefits of Computer-Aided Simulation
  • 1.7.3 Demerits of Computer-Aided Simulation.
  • 1.7.4 Simulation Tools
  • Review Questions
  • Summary
  • References/Further Reading
  • Chapter 2: Power Semiconductor Devices
  • 2.1 Introduction
  • 2.2 Power Diode
  • 2.2.1 Working and V-I Characteristics
  • 2.2.2 Diode Reverse Recovery Characteristics
  • 2.3 DIAC
  • 2.4 TRIAC
  • 2.5 Characteristics of Power Transistors
  • 2.5.1 Bipolar Junction Transistor
  • 2.5.1.1 Steady-State Characteristics
  • 2.5.1.2 Switching Characteristics of a BJT
  • 2.5.2 Power MOSFETs
  • 2.5.3 Insulated-Gate Bipolar Transistor
  • 2.6 Characteristics of the Thyristor
  • 2.6.1 Static V-I Characteristics of a Thyristor.
  • 2.6.1.1 Reverse Blocking Mode (RBM)
  • 2.6.1.2 Forward Blocking Mode
  • 2.6.1.3 Forward Conducting Mode
  • 2.6.2 Switching Characteristics of a Thyristor
  • 2.6.3 Thyristor Gate Characteristics
  • 2.7 Gate Turn-Off (GTO) Thyristor
  • 2.7.1 Static V-I Characteristics
  • 2.7.2 Switching Characteristics of GTO
  • 2.8 Two-Transistor Model of a Thyristor
  • Review Questions
  • Summary
  • References/Further Reading
  • Chapter 3: Silicon-Controlled Rectifier
  • 3.1 Introduction
  • 3.2 SCR Construction
  • 3.2.1 Planer Diffused
  • 3.2.2 Alloy Diffused
  • 3.3 Specifications and Ratings.
  • 3.3.1 Voltage Ratings
  • 3.3.2 Current Ratings
  • 3.4 Methods of Turn On
  • 3.4.1 Gate Triggering
  • 3.4.2 Forward Voltage Triggering
  • 3.4.3 dv/dt Triggering
  • 3.4.4 Temperature Triggering
  • 3.4.5 Light Triggering
  • 3.5 Firing (Triggering) Circuits for SCR
  • 3.5.1 Resistance (R) Triggering Circuit
  • 3.5.2 Resistance-Capacitance (RC) Triggering Circuit
  • 3.5.3 UJT Relaxation Oscillator
  • 3.6 Series and Parallel Operation of SCR
  • 3.6.1 Series-Connected SCRs
  • 3.6.2 Parallel-Connected SCRs
  • 3.7 String Efficiency
  • 3.8 Protection of SCR
  • 3.8.1 Overvoltage Protection.
  • 3.8.2 Overcurrent Protection
  • 3.8.3 dv/dt Protection
  • 3.8.4 di/dt Protection
  • 3.8.5 Gate Protection
  • 3.9 Solved Problems
  • Review Questions and Unsolved Problems
  • Summary
  • Main Formulas of the Chapter
  • References/Further Reading
  • SECTION II: Power Electronic Converters
  • Chapter 4: Phase-Controlled Rectifiers
  • 4.1 Introduction
  • 4.2 Classifications
  • 4.3 Performance Indices for Line-Commutated Converter
  • 4.4 Single-Phase Converters
  • 4.4.1 Single-Phase Half-Wave-Controlled Rectifier with R Load
  • 4.4.2 Single-Phase Half-Wave-Controlled Rectifier with RL Load.
  • 4.4.3 Single-Phase Half-Wave-Controlled Rectifier with RL Load and Freewheeling Diode (FD)

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