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Technology computer aided design : simulation for VLSI MOSFET / edited by Chandan Kumar Sarkar.

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"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and co...

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Bibliographic Details
Online Access: Full Text (via O'Reilly/Safari)
Other Authors: Sarkar, Chandan Kumar (Editor)
Format: eBook
Language:English
Published: Boca Raton : CRC Press, ©2013.
Subjects:
Integrated circuits > Very large scale integration > Computer-aided design.
Metal oxide semiconductor field-effect transistors > Computer-aided design.
Integrated circuits > Very large scale integration > Computer-aided design
Table of Contents:
  • 1. Introduction to technology computer aided design / Samar K. Saha
  • 2. Basic semiconductor and Metal-Oxide-Semiconductor (MOS) physics / Swapnadip De
  • 3. Review of numerical methods for Technology Computer Aided Design (TCAD) / Kalyan Koley
  • 4. Device simulation using ISE-TCAD / N. Mohankumar
  • 5. Device simulation using silvaco ATLAS tool / Angsuman Sarkar
  • 6. Study of deep sub-micron VLSI MOSFETs through TCAD / Srabanti Pandit
  • 7. MOSFET characterization for VLSI circuit simulation / Soumya Pandit
  • 8. Process simulation of a MOSFET using TSUPREM-4 and medici / Atanu Kundu.

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