MOS interface physics, process and characterization / Shengkai Wang, Xiaolei Wang.

"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental example...

Full description

Saved in:
Bibliographic Details
Online Access: Full Text (via Taylor & Francis)
Main Authors: Wang, Shengkai, 1984- (Author), Wang, Xiaolei, 1985- (Author)
Format: eBook
Language:English
Published: Boca Raton : CRC Press, 2022.
Edition:First edition.
Subjects:

MARC

LEADER 00000cam a2200000xi 4500
001 b11972866
006 m o d
007 cr |||||||||||
008 210413s2022 flu ob 000 0 eng
005 20240930163606.0
010 |a 2021017024 
020 |a 9781000455762  |q (epub) 
020 |a 1000455769 
020 |a 9781003216285  |q (ebk) 
020 |a 1003216285 
020 |z 9781032106274  |q (hbk) 
020 |z 9781032106281  |q (pbk) 
020 |a 9781000455748  |q (electronic bk. : PDF) 
020 |a 1000455742  |q (electronic bk. : PDF) 
035 |a (OCoLC)tfe1246675734 
035 |a (OCoLC)1246675734 
037 |a tfe9781003216285 
040 |a DLC  |b eng  |e rda  |c DLC  |d OCLCF  |d TYFRS  |d DLC 
042 |a pcc 
049 |a GWRE 
050 0 0 |a TK7871.99.M44 
100 1 |a Wang, Shengkai,  |d 1984-  |e author.  |0 http://id.loc.gov/authorities/names/n2021019860. 
245 1 0 |a MOS interface physics, process and characterization /  |c Shengkai Wang, Xiaolei Wang. 
250 |a First edition. 
264 1 |a Boca Raton :  |b CRC Press,  |c 2022. 
300 |a 1 online resource. 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
504 |a Includes bibliographical references. 
520 |a "The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"--  |c Provided by publisher. 
588 |a Description based on print version record and CIP data provided by publisher. 
650 0 |a Metal oxide semiconductors  |x Design and construction  |x Mathematics. 
650 0 |a Semiconductors  |x Junctions.  |0 http://id.loc.gov/authorities/subjects/sh85119913. 
650 0 |a Integrated circuits  |x Research. 
650 0 |a Solid state physics  |x Experiments. 
650 7 |a Integrated circuits  |x Research.  |2 fast  |0 (OCoLC)fst00975590. 
650 7 |a Semiconductors  |x Junctions.  |2 fast  |0 (OCoLC)fst01112231. 
700 1 |a Wang, Xiaolei,  |d 1985-  |e author.  |0 http://id.loc.gov/authorities/names/n2021019867. 
776 0 8 |i Print version:  |a Wang, Shengkai, 1984-  |t MOS interface physics, process and characterization  |b First edition.  |d Boca Raton : CRC Press, 2022  |z 9781032106274  |w (DLC) 2021017023. 
856 4 0 |u https://colorado.idm.oclc.org/login?url=https://www.taylorfrancis.com/books/9781003216285  |z Full Text (via Taylor & Francis) 
907 |a .b119728667  |b 02-07-22  |c 10-04-21 
956 |a Taylor & Francis Ebooks 
956 |b Taylor & Francis All eBooks 
956 |a Taylor & Francis Perpetual 
998 |a web  |b 11-30-21  |c b  |d b   |e -  |f eng  |g flu  |h 0  |i 1 
907 |a .b119728667  |b 12-01-21  |c 10-04-21 
907 |a .b119728667  |b 10-20-21  |c 10-04-21 
915 |a - 
907 |a .b119728667  |b 11-30-21  |c 10-04-21 
944 |a MARS - RDA ENRICHED 
999 f f |i 9018b487-a765-5be9-9b20-26b7ea89f91b  |s 0da7916d-441c-5359-805c-f1380eb26a27 
952 f f |p Can circulate  |a University of Colorado Boulder  |b Online  |c Online  |d Online  |e TK7871.99.M44  |h Library of Congress classification  |i web  |n 1