Handbook of 3D Integration : 3D process technology / edited by Philip Garrou, Mitsumasa Koyanagi, and Peter Ramm.
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Full Text (via Wiley) |
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| Other Authors: | , , |
| Format: | eBook |
| Language: | English |
| Published: |
Weinheim, Germany :
Wiley-VCH,
2014.
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| Subjects: |
Table of Contents:
- Handbook of 3D Integration: 3D Process Technology; Contents; List of Contributors; 1 3D IC Integration Since 2008; 1.1 3D IC Nomenclature; 1.2 Process Standardization; 1.3 The Introduction of Interposers (2.5D); 1.4 The Foundries; 1.4.1 TSMC; 1.4.2 UMC; 1.4.3 GlobalFoundries; 1.5 Memory; 1.5.1 Samsung; 1.5.2 Micron; 1.5.3 Hynix; 1.6 The Assembly and Test Houses; 1.7 3D IC Application Roadmaps; References; 2 Key Applications and Market Trends for 3D Integration and Interposer Technologies; 2.1 Introduction; 2.2 Advanced Packaging Importance in the Semiconductor Industry is Growing.
- 2.3 3D Integration-Focused Activities
- The Global IP Landscape2.4 Applications, Technology, and Market Trends; References; 3 Economic Drivers and Impediments for 2.5D/3D Integration; 3.1 3D Performance Advantages; 3.2 The Economics of Scaling; 3.3 The Cost of Future Scaling; 3.4 Cost Remains the Impediment to 2.5D and 3D Product Introduction; 3.4.1 Required Economics for Interposer Use in Mobile Products; 3.4.2 Silicon Interposer Pricing; References; 4 Interposer Technology; 4.1 Definition of 2.5D Interposers; 4.2 Interposer Drivers and Need; 4.3 Comparison of Interposer Materials.
- 4.4 Silicon Interposers with TSV4.5 Lower Cost Interposers; 4.5.1 Glass Interposers; 4.5.1.1 Challenges in Glass Interposers; 4.5.1.2 Small-Pitch Through-Package Via Hole Formation and Ultrathin Glass Handling; 4.5.1.3 Metallization of Glass TPV; 4.5.1.4 Reliability of Copper TPVs in Glass Interposers; 4.5.1.5 Thermal Dissipation of Glass; 4.5.1.6 Glass Interposer Fabrication with TPV and RDL; 4.5.2 Low-CTE Organic Interposers; 4.5.3 Polycrystalline Silicon Interposer; 4.5.3.1 Polycrystalline Silicon Interposer Fabrication Process; 4.6 Interposer Technical and Manufacturing Challenges.
- 4.7 Interposer Application Examples4.8 Conclusions; References; 5 TSV Formation Overview; 5.1 Introduction; 5.2 TSV Process Approaches; 5.2.1 TSV-Middle Approach; 5.2.2 Backside TSV-Last Approach; 5.2.3 Front-Side TSV-Last Approach; 5.3 TSV Fabrication Steps; 5.3.1 TSV Etching; 5.3.2 TSV Insulation; 5.3.3 TSV Metallization; 5.3.4 Overburden Removal by CMP; 5.3.5 TSV Anneal; 5.3.6 Temporary Carrier Wafer Bonding and Debonding; 5.3.7 Wafer Thinning and TSV Reveal; 5.4 Yield and Reliability; References; 6 TSV Unit Processes and Integration; 6.1 Introduction; 6.2 TSV Process Overview.
- 6.3 TSV Unit Processes6.3.1 Etching; 6.3.2 Insulator Deposition with CVD; 6.3.3 Metal Liner/Barrier Deposition with PVD; 6.3.4 Via Filling by ECD of Copper; 6.3.5 CMP of Copper; 6.3.6 Temporary Bonding between Carrier and Device Wafer; 6.3.7 Wafer Backside Thinning; 6.3.8 Backside RDL; 6.3.9 Metrology, Inspection, and Defect Review; 6.4 Integration and Co-optimization of Unit Processes in Via Formation Sequence; 6.5 Co-optimization of Unit Processes in Backside Processing and Via-Reveal Flow; 6.6 Integration and Co-optimization of Unit Processes in Via-Last Flow.