Ultra Clean Processing of Semiconductor Surfaces XV.
Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) Selected, peer-reviewed papers from the 15-th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), April 12-15, 2021, Mechelen, Be...
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Full Text (via Knovel) |
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| Main Author: | |
| Other Authors: | , , |
| Format: | eBook |
| Language: | English |
| Published: |
Zurich :
Trans Tech Publications, Limited,
2021.
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| Series: | Solid State Phenomena Ser.
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| Subjects: |
Table of Contents:
- Intro
- Ultra Clean Processing of Semiconductor Surfaces XV
- Preface
- Table of Contents
- Chapter 1: Contamination and Contamination Control
- Surface Cleaning Challenges for Organic Light Emitting Diodes
- Characterization and Removal of Metallic Contamination in H2O and H2O2 Using Single Particle Inductively Coupled Plasma Mass Spectrometry
- Direct Analysis of Ultra Trace Metallic Particles in NH3 and HCl Gases by Gas Exchange Device (GED)-ICP-MS
- Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol.
- Cl-Containing Microplastics from the Environment
- Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines
- Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow
- Chapter 2: FEOL: Surface Chemistry and Etching of Group IV Semiconductors
- Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe
- Wet Chemical Cleaning of Organosilane Monolayers
- Reaction Kinetics of Poly-Si Etching in TMAH Solution.
- Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions
- Si1-XGeX Selective Etchant for Gate-All-Around Transistors
- Chapter 3: FEOL: Surface Chemistry and Etching of III-V Compound Semiconductors
- GaN MOS Structures with Low Interface Trap Density
- Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water
- Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions
- Characterization of Wet Chemical Atomic Layer Etching of InGaAs.
- Chapter 4: FEOL: Etch Dielectric Films and Removal of Masking Films
- Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning
- Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid
- Kinetic Study on the Si3N4 Etching in Superheated Water
- Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling
- Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas.
- High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System
- Chapter 5: Wet Processing in Narrow Spaces and Pattern Collapse
- Polydimethylsiloxane Micro-Channels Application for the Study of Dynamic Wetting of Nano-Etched Silicon Surfaces Based on Acoustic Characterization Method
- Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR
- Effect of Hydrophobicity and Surface Potential of Silicon on SiO2 Etching in Nanometer-Sized Narrow Spaces.