Optimal carrier concentration for FeSb<sub>2</sub> colossal thermopower [electronic resource]
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy. Office of Science ; Distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2021.
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| Abstract: | Crystals of FeSb<sub>2</sub> correlated narrow-gap semiconductor host colossal thermopower values. By tuning the impurity level here, we demonstrate that electron-phonon scattering that transfers phonon momentum to electrons is efficient only for certain optimal carrier concentration in the low-mobility band. Phonon drag acting on such states in crystals with high phonon mean free path enhances thermopower to colossal values, whereas for different carrier concentration, dominant thermal transport mechanism is electronic diffusion. This highlights the dual nature of correlated in-gap states that take part in the phonon drag but also reduce phonon mean free path. |
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| Item Description: | Published through Scitech Connect. 06/07/2021. "BNL-221725-2021-JAAM." "Journal ID: ISSN 0003-6951." ": US2212731." Du, Qianheng ; Petrovic, Cedomir ; |
| Physical Description: | Size: Article No. 233901 : digital, PDF file. |