K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications [microform] / Hua-Quen Tserng [and others]

"The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40...

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Bibliographic Details
Online Access: Click here to view full text online
Corporate Authors: Lewis Research Center, United States. National Aeronautics and Space Administration
Other Authors: Tserng, Hua Quen
Other title:K band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications.
K-band power enbedded transmission line (ETL) MMIC amplifiers for satellite communication applications.
K-band power embedded transmission line (ETL) MMIC amplifiers for satellite communication applications.
Format: Government Document Microfilm Book
Language:English
Published: [Cleveland, Ohio] : Springfield, VA : National Aeronautics and Space Administration, Lewis Research Center ; National Technical Information Service [distributor], [1998]
Series:NASA contractor report ; NASA CR-208681.
Subjects:

MARC

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246 3 |a K-band power embedded transmission line (ETL) MMIC amplifiers for satellite communication applications. 
260 |a [Cleveland, Ohio] :  |b National Aeronautics and Space Administration, Lewis Research Center ;  |a Springfield, VA :  |b National Technical Information Service [distributor],  |c [1998] 
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520 |a "The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved."--NASA Technical Reports Server web site. 
530 |a Available in microfiche and via the Internet. 
650 0 |a Integrated circuits.  |0 http://id.loc.gov/authorities/subjects/sh85067117. 
650 7 |a Satellite communication.  |2 nasat. 
650 7 |a Superhigh frequencies.  |2 nasat. 
650 7 |a Linear amplifiers.  |2 nasat. 
650 7 |a Integrated circuits.  |2 nasat. 
650 7 |a Extremely high frequencies.  |2 nasat. 
700 1 |a Tserng, Hua Quen.  |0 http://id.loc.gov/authorities/names/nr89012985  |1 http://isni.org/isni/0000000054230451. 
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