Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications [electronic resource]
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| Online Access: |
Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1999.
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| Subjects: |
| Abstract: | We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approx}0.55{micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron mobilities of {approx}40,000 cm²/V.s. We have investigated the In{sub 1-x}Al{sub x}Sb buffers for compositions x {le} 0.22 and have found that the best results are obtained near x = 0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 12/08/1999. "SAND99-2020C" 1999 Fall MRS Meeting, Boston, MA (US), 11/29/1999--12/03/1999. PHILLIPS,J.D.; BIEFELD,ROBERT M. |
| Physical Description: | 6 pages. |