Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells [electronic resource]
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Online Access |
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Corporate Author: | |
Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, DC : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary for Nuclear Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1998.
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Abstract: | The authors have studied efficient p-on-n homo- (InGaAsSb/GaSb) and heterojunction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S. In both cell types the open-circuit voltage, V{sub oc}, and the short-circuit current, J{sub ac}, have about the same sensitivity to S. The dark current, J₀, is the most sensitive of all. An examination of the essential factors in the one-dimensional minority-carrier diffusion model shows that under short-circuit conditions, photogenerated electrons diffuse rapidly away from the interface to the junction, whereas under open-circuit conditions, they remain in the emitter for a much longer bulk-recombination time, and therefore, they are more likely to recombine at the interface. A factor of 2.2 increase in S from 5 to 11 {times} 10⁴ cm/s produces a 25-mV decrease in V{sub oc}, a 12-% decrease in J{sub ac} or quantum efficiency, and a factor of two increase in J₀. This work points out the critical importance of interfacial recombination even in efficient TPV cells. |
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Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 10/01/1998. "KAPL-P--000117" "K--98159;CONF-981055--" "DE99001616" 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998. Connolly, J.C.; Lee, H.; Taylor, G.C.; Martinelli, R.U.; Morris, N.; Khalfin, V.B.; Garbuzov, D.Z. Knolls Atomic Power Lab., Schenectady, NY (United States) |
Physical Description: | 12 p. |