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|a (TOE)ost307865
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|a E 1.99:K--98159;CONF-981055--
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|a E 1.99:KAPL-P--000117
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|a E 1.99:K--98159;CONF-981055--
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|a KAPL-P--000117
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|a K--98159;CONF-981055--
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|a DE99001616
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|a Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells
|h [electronic resource]
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|a Washington, DC :
|b United States. Office of the Assistant Secretary for Nuclear Energy ;
|a Oak Ridge, Tenn. :
|b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
|c 1998.
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|a 12 p.
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|a text
|b txt
|2 rdacontent.
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|a computer
|b c
|2 rdamedia.
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|a online resource
|b cr
|2 rdacarrier.
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|a Published through the Information Bridge: DOE Scientific and Technical Information.
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|a 10/01/1998.
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|a "KAPL-P--000117"
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|a "K--98159;CONF-981055--"
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|a "DE99001616"
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|a 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998.
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|a Connolly, J.C.; Lee, H.; Taylor, G.C.; Martinelli, R.U.; Morris, N.; Khalfin, V.B.; Garbuzov, D.Z.
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|a Knolls Atomic Power Lab., Schenectady, NY (United States)
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|a The authors have studied efficient p-on-n homo- (InGaAsSb/GaSb) and heterojunction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S. In both cell types the open-circuit voltage, V{sub oc}, and the short-circuit current, J{sub ac}, have about the same sensitivity to S. The dark current, J₀, is the most sensitive of all. An examination of the essential factors in the one-dimensional minority-carrier diffusion model shows that under short-circuit conditions, photogenerated electrons diffuse rapidly away from the interface to the junction, whereas under open-circuit conditions, they remain in the emitter for a much longer bulk-recombination time, and therefore, they are more likely to recombine at the interface. A factor of 2.2 increase in S from 5 to 11 {times} 10⁴ cm/s produces a 25-mV decrease in V{sub oc}, a 12-% decrease in J{sub ac} or quantum efficiency, and a factor of two increase in J₀. This work points out the critical importance of interfacial recombination even in efficient TPV cells.
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|b AC12-76SN00052.
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|a Thermophotovoltaic Converters.
|2 local.
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|a Gallium Antimonides.
|2 local.
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|a Indium Antimonides.
|2 local.
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|a Indium Arsenides.
|2 local.
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|a Gallium Arsenides.
|2 local.
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|a Aluminium Arsenides.
|2 local.
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|a Recombination.
|2 local.
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|a Charge Carriers.
|2 local.
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|a Photocurrents.
|2 local.
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|a Quantum Efficiency.
|2 local.
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| 650 |
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|a Materials Science ;30 Direct Energy Conversion.
|2 edbsc.
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| 710 |
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|a United States.
|b Office of the Assistant Secretary for Nuclear Energy.
|4 spn.
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| 710 |
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|a Knolls Atomic Power Laboratory.
|4 res.
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| 710 |
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|a United States.
|b Department of Energy.
|b Office of Scientific and Technical Information.
|4 dst.
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| 856 |
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|u http://www.osti.gov/servlets/purl/307865-ETf51B/webviewable/
|z Online Access
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| 907 |
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|a .b56308528
|b 03-06-23
|c 12-16-09
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| 998 |
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|a web
|b 12-16-09
|c f
|d m
|e p
|f eng
|g dcu
|h 0
|i 1
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|a Information bridge
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| 952 |
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|p Can circulate
|a University of Colorado Boulder
|b Online
|c Online
|d Online
|e E 1.99:K--98159;CONF-981055--
|h Superintendent of Documents classification
|i web
|n 1
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