Performance status of 0.55 eV InGaAs thermophotovoltaic cells [electronic resource]
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, DC : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary for Nuclear Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1998.
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| Abstract: | Data on {approximately} 0.55 eV In{sub 0.72}Ga{sub 0.28}As cells with an average open-circuit voltage (Voc) of 298 mV (standard deviation 7 mV) at an average short-circuit current density of 1.16 A/cm² (sdev. 0.1 A/cm² and an average fill-factor of 61.6% (sdev. 2.8%) is reported. The absorption coefficient of In{sub 0.72}Ga{sub 0.28}As was measured by a differential transmission technique. The authors use a numerical integration of the absorption data to determine the radiative recombination coefficient for In{sub 0.72}Ga{sub 0.28}As. Using this absorption data and simple one-dimensional analytical formula the above cells are modeled. The models show that the cells may be limited more by Auger recombination rather than Shockley-Read-Hall (SRH) recombination at dislocation centers caused by the 1.3% lattice mismatch of the cell to the host InP wafer. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 10/01/1998. "KAPL-P--000121" "K--98163;CONF-981055--" "DE99001609" 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998. Colter, P.; Charache, G.; DePoy, D.; Wojtczuk, S. Knolls Atomic Power Lab., Schenectady, NY (United States) |
| Physical Description: | 12 p. |