Bridgman growth and characterization of bulk single crystals of Ga{sub 1-x}In{sub x}Sb for thermophotovoltaic applications [electronic resource]
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| Online Access: |
Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, DC : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary for Nuclear Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1997.
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| Abstract: | Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5--0.7 eV) III-V semiconductors. The use of mixed pseudo-binary compounds allows for the tailoring of the lattice parameter and the bandgap of the material. Conventional deposition techniques (i.e., epitaxy) for producing such ternary or quaternary materials are typically slow and expensive. Production of bulk single crystals of ternary materials, for example Ga{sub 1-x}In{sub x}Sb, is expected to dramatically reduce such material costs. Bulk single crystals of Ga{sub 1-x}In{sub x}Sb have been prepared using a Bridgman technique in a two-zone furnace. These crystals are 19 mm in diameter by approximately 50 mm long and were produced using seeds of the same diameter. The effects of growth rate and starting materials on the composition and quality of these crystals will be discussed and compared with other attempts to produce single crystals of this material. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 12/01/1997. "KAPL-P--000207" "K--97128;CONF-971201--" "DE99001961" 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997. Boyer, J.R.; Haines, W.T. Knolls Atomic Power Lab., Schenectady, NY (United States) |
| Physical Description: | 12 p. |