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091215e19960126nvu st f1|||||eng|d |
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|a (TOE)ost584984
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|a (TOE)584984
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|a TOE
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|a GDWR
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|a 36
|2 edbsc
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|a E 1.99:CONF-950380--
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|a E 1.99:DOE/NV/11627--2
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|a E 1.99:CONF-950380--
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|a DOE/NV/11627--2
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|a CONF-950380--
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|a DE98001743
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|a Top-seed solution growth and characterization of AlSb single crystals for gamma-ray detectors. Final report, 1 October 1994--30 September 1995
|h [electronic resource]
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| 260 |
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|a Las Vegas. Nev. :
|b United States. Dept. of Energy. Nevada Operations Office ;
|a Oak Ridge, Tenn. :
|b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
|c 1996.
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| 300 |
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|a 11 p.
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| 336 |
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|a text
|b txt
|2 rdacontent.
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| 337 |
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|a computer
|b c
|2 rdamedia.
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| 338 |
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|a online resource
|b cr
|2 rdacarrier.
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|a Published through the Information Bridge: DOE Scientific and Technical Information.
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| 500 |
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|a 01/26/1996.
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|a "DOE/NV/11627--2"
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|a "CONF-950380--"
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|a "DE98001743"
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|a Annual meeting of the Division of High Polymer Physics of the American Physical Society, San Jose, CA (United States), 20-24 Mar 1995.
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|a Sanchez, J.; Becla, P.; Witt, A.F.; Morse, K.; Counterman, C.; DiFrancesco, J.; Landahl, G.
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| 500 |
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|a Massachusetts Inst. of Tech., Cambridge, MA (United States)
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| 500 |
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|a USDOE, Washington, DC (United States);Massachusetts Inst. of Tech., Cambridge, MA (United States)
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| 520 |
3 |
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|a The ultimate objective of the conducted research is to ascertain the potential of AlSb (in single crystal form) for application as γ-detector material operating at room temperature. To this end approaches to crystal growth were to be developed which permit control of growth parameters affecting critical application specific properties of AlSb. The research was focused on exploration of the effectiveness of the Czochralski method and on the development of methods and procedures leading to AlSb crystals with low free carrier concentration and a high mobility-lifetime product. Conventional melt growth of AlSb by the Czochralski technique (from stoichiometric charges) generally yielded material with high net carrier concentrations and low mobility-lifetime products. Significant improvement in crystal properties was achieved, when operating with non-stoichiometric melts, containing Sb in excess at levels of 3 to 10 mol%, further improvements were obtained when changing ambient argon pressure from atmospheric to 300 psi, and using high purity alumina crucibles which were inductively heated with a graphite susceptor CVD coated with silicon-carbide. Initial efforts to reduce evaporative loss of Sb through application of the LEC technique (liquid encapsulated Czochralski) with conventional encapsulants (B₂O₃, LiF, CaF₂ failed because of their interaction with the crucible and the AlSb melt. Compensation techniques (based on extrinsic doping) were found to lead to the desired reduction of free carriers in AlSb. Such material, however, exhibits a significant decrease of charge carrier mobility and lifetime. Early termination of this research program prevented optimization of critical materials properties in AlSb and precluded at this time a realistic assessment of the potential of this material for solid state detector applications.
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|b FG08-94NV11627.
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| 650 |
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7 |
|a Antimonides.
|2 local.
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| 650 |
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|a Aluminium Compounds.
|2 local.
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| 650 |
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7 |
|a Gamma Detection.
|2 local.
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| 650 |
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7 |
|a Semiconductor Detectors.
|2 local.
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| 650 |
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|a Progress Report.
|2 local.
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| 650 |
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|a Ambient Temperature.
|2 local.
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| 650 |
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|a Czochralski Method.
|2 local.
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| 650 |
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|a Charge Carriers.
|2 local.
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| 650 |
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7 |
|a Physical Properties.
|2 local.
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| 650 |
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7 |
|a Crystal Doping.
|2 local.
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| 650 |
|
7 |
|a Materials Science ;44 Instrumentation, Including Nuclear And Particle Detectors.
|2 edbsc.
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| 710 |
1 |
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|a United States.
|b Department of Energy.
|b Nevada Operations Office.
|4 res.
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| 710 |
2 |
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|a United States.
|b Department of Energy.
|b Office of Scientific and Technical Information.
|4 dst.
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| 856 |
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|u http://www.osti.gov/servlets/purl/584984-hKHyzd/webviewable/
|z Online Access
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| 907 |
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|a .b56564612
|b 03-06-23
|c 12-20-09
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| 998 |
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|a web
|b 12-20-09
|c f
|d m
|e p
|f eng
|g nvu
|h 0
|i 1
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| 956 |
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|a Information bridge
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|s 25754336-e02c-58cd-af16-23b80853a4b6
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| 952 |
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|p Can circulate
|a University of Colorado Boulder
|b Online
|c Online
|d Online
|e E 1.99:CONF-950380--
|h Superintendent of Documents classification
|i web
|n 1
|
