P-type silicon drift detectors [electronic resource]

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Bibliographic Details
Online Access: Online Access
Corporate Authors: Lawrence Berkeley Laboratory (Researcher), Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1995.
Subjects:

MARC

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245 0 0 |a P-type silicon drift detectors  |h [electronic resource] 
260 |a Washington, D.C. :  |b United States. Dept. of Energy ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,   |c 1995. 
300 |a 22 p. 
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500 |a Published through the Information Bridge: DOE Scientific and Technical Information. 
500 |a 06/01/1995. 
500 |a "LBL--37243" 
500 |a "CONF-9505291--1" 
500 |a "DE96001120" 
500 |a 7. European symposium on semiconductor detectors, new developments in radiation detectors, Munich (Germany), 7-10 May 1995. 
500 |a Walton, J.T.; Wang, N.W.; Partlan, M.D.; Krofcheck, D.; Odyniec, G.; Krieger, B.; ÒDonnell, R. 
520 3 |a Preliminary results on 16 CM², position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 {times} l0⁶ s⁻¹ is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed. 
536 |b AC03-76SF00098. 
650 7 |a Position Sensitive Detectors.  |2 local. 
650 7 |a Drift Chambers.  |2 local. 
650 7 |a Si Semiconductor Detectors.  |2 local. 
650 7 |a Counting Rates.  |2 local. 
650 7 |a P-type Conductors.  |2 local. 
650 7 |a Ion Implantation.  |2 local. 
650 7 |a Particle Tracks.  |2 local. 
650 7 |a Instrumentation, Including Nuclear And Particle Detectors.  |2 edbsc. 
710 2 |a Lawrence Berkeley Laboratory.  |4 res. 
710 2 |a United States.  |b Department of Energy.  |4 spn. 
710 2 |a Lawrence Berkeley National Laboratory.  |4 res. 
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