Cover Image

A Radiation-Hard Analog Memory In The AVLSI-RA Process [electronic resource]

Complementary Metal Oxide Semiconductors;avlsi-ra;avlsi(advanced Very Large Scale Integration)

Saved in:
Bibliographic Details
Online Access: Online Access
Corporate Author: Oak Ridge National Laboratory. (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Energy Research ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1995.
Subjects:
Production.
Power.
Analog Systems.
Memory Devices.
Design.
Fabrication.
Physical Radiation Effects.
Readout Systems.
Instrumentation, Including Nuclear And Particle Detectors;42 Engineering Not Included In Other Categories.

MARC

LEADER 00000nam a22000003u 4500
001 b5669312
003 CoU
005 20091210010342.0
006 m d f
007 cr un
008 091215e19951231dcu s| f1|||||eng|d
035 |a (TOE)ost623051 
035 |a (TOE)623051 
040 |a TOE  |c TOE 
049 |a GDWR 
072 7 |a 44  |2 edbsc 
086 0 |a E 1.99:CONF-9509265-- 
086 0 |a E 1.99:ORNL/CP--94465 
086 0 |a E 1.99:CONF-9509265-- 
088 |a ORNL/CP--94465 
088 |a CONF-9509265-- 
088 |a DE98000322 
245 0 2 |a A Radiation-Hard Analog Memory In The AVLSI-RA Process  |h [electronic resource] 
260 |a Washington, D.C. :  |b United States. Dept. of Energy. Office of Energy Research ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,   |c 1995. 
300 |a 7 p. 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
500 |a Published through the Information Bridge: DOE Scientific and Technical Information. 
500 |a 12/31/1995. 
500 |a "ORNL/CP--94465" 
500 |a "CONF-9509265--" 
500 |a "DE98000322" 
500 |a 1. workshop on electronics for large Hadron collider experiments, Lisbon (Portugal), 10-15 Sep 1995. 
500 |a Young, G.R.; Musser, J.A.; Simpson, M.L.; Britton, C.L. Jr.; Clonts, L.G., Kennedy, E.J., Smith, R.S.; Wintenberg, A.L.; Read, K.F. 
520 3 |a A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented. 
520 0 |a Complementary Metal Oxide Semiconductors;avlsi-ra;avlsi(advanced Very Large Scale Integration) 
536 |b AC05-84OR21400. 
650 7 |a Production.  |2 local. 
650 7 |a Power.  |2 local. 
650 7 |a Analog Systems.  |2 local. 
650 7 |a Memory Devices.  |2 local. 
650 7 |a Design.  |2 local. 
650 7 |a Fabrication.  |2 local. 
650 7 |a Physical Radiation Effects.  |2 local. 
650 7 |a Readout Systems.  |2 local. 
650 7 |a Instrumentation, Including Nuclear And Particle Detectors;42 Engineering Not Included In Other Categories.  |2 edbsc. 
710 2 |a Oak Ridge National Laboratory.  |b .  |4 res. 
710 1 |a United States.  |b Department of Energy.  |b Office of Energy Research.  |4 spn. 
710 2 |a United States.  |b Department of Energy.  |b Office of Scientific and Technical Information.  |4 dst. 
856 4 0 |u http://www.osti.gov/servlets/purl/623051-Fo5H0x/webviewable/  |z Online Access 
907 |a .b56693126  |b 03-06-23  |c 12-21-09 
998 |a web  |b 12-21-09  |c f  |d m   |e p  |f eng  |g dcu  |h 2  |i 1 
956 |a Information bridge 
999 f f |i 46774645-1409-55c0-8e02-8c25b817e778  |s c470698e-5dfd-56cd-8ffc-47d73f78944c 
952 f f |p Can circulate  |a University of Colorado Boulder  |b Online  |c Online  |d Online  |e E 1.99:CONF-9509265--  |h Superintendent of Documents classification  |i web  |n 1 

Similar Items