Vacancy related defects in thin film Pb(ZrTi)O₃ materials [electronic resource]
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| Online Access: |
Online Access |
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| Corporate Authors: | , |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1994.
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| Subjects: |
| Abstract: | Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(ZrTi)O₃ (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO₂ electrodes, or by laser ablation with La{sub 0.5}Sr{sub 0.5}CoO₃ electrodes. The RuO₂ and La{sub 0.5}Sr{sub 0.5}CoO₃ electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La{sub 0.5}Sr{sub 0.5}CoO₃ layers was observed indicating an increase in neutral or negatively charged open-volume defects. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 12/31/1994. "bnl--60717" " conf-941144--65" "DE95007696" "GB0103012" Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),28 Nov - 9 Dec 1994. Lynn, K.G.; Warren, W.L.; Nielsen, B.; Tuttle, B.A.; Ramesh, R.; Krishnan, A.; Keeble, D.J.; Pfeffer, R.L. |
| Physical Description: | 6 p. : digital, PDF file. |