Sandia National Laboratories. (1993). Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors. United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Chicago Style (17th ed.) CitationSandia National Laboratories. Effect of Exciton Localization and Delocalization on Magnetic-field-dependent Photoluminescence Linewidths in Semiconductors. Washington, D.C. : Oak Ridge, Tenn.: United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993.
MLA (8th ed.) CitationSandia National Laboratories. Effect of Exciton Localization and Delocalization on Magnetic-field-dependent Photoluminescence Linewidths in Semiconductors. United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993.