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|a (TOE)ost10175313
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|a (TOE)10175313
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|a E 1.99:nrel/tp--451-5014
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|a E 1.99:nrel/tp--451-5014
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|a Novel thin-film CuInSe₂ fabrication. Annual subcontract report, 1 May 1991--30 April 1992
|h [electronic resource]
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| 260 |
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|a Washington, D.C. :
|b United States. Dept. of Energy ;
|a Oak Ridge, Tenn. :
|b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
|c 1992.
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| 300 |
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|a 20 p. :
|b digital, PDF file.
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| 336 |
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|a text
|b txt
|2 rdacontent.
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| 337 |
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|a computer
|b c
|2 rdamedia.
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| 338 |
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|a online resource
|b cr
|2 rdacarrier.
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|a Published through the Information Bridge: DOE Scientific and Technical Information.
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| 500 |
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|a 09/01/1992.
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| 500 |
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|a "nrel/tp--451-5014"
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| 500 |
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|a "DE92016440"
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| 500 |
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|a Gabor, A.; Hermann, A.
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| 513 |
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|a Annual;
|b 01/01/1991 - 12/31/1992.
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| 520 |
3 |
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|a This report describes work to form thin films of CuInSe₂ (CIS) by annealing precursor films containing Cu, In, and Se in a rapid thermal processor. This involves two steps: (1) a precursor containing Cu, In, and Se is deposited on unheated substrates such that CIS does not form during this deposition step, and (2) the precursor is annealed in a rapid thermal processor to crystallize the CIS. Advantages of this process are that (1) no H₂Se is used; (2) concentration gradients can potentially be built into the film due to the rapid anneal; and (3) the precursor can potentially be deposited using scalable methods such as sputtering, solution growth, and electrodeposition. The deposition method used was three-source, elemental physical vapor deposition. At room temperature, such a method was considered to be a flexible way to deposit a precursor that would be fairly typical of precursors deposited by more scalable techniques. Precursors were made both by the stacked elemental layer approach, where one element at a time wsas evaporated, as well as by a co-evaporation method. Adhesion problems limited device performance, and the co-evaporated precursors displayed unintended segregation of Cu and I in a direction normal to the film plane. The best cell efficiency was 3.5%
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| 536 |
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|b AC02-83CH10093.
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| 650 |
|
7 |
|a Annealing.
|2 local.
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| 650 |
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7 |
|a Indium Selenides.
|2 local.
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| 650 |
|
7 |
|a Adhesion.
|2 local.
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| 650 |
|
7 |
|a Fabrication.
|2 local.
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| 650 |
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|a Progress Report.
|2 local.
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| 650 |
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7 |
|a Indium Selenide Solar Cells.
|2 local.
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| 650 |
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|a Copper Selenide Solar Cells.
|2 local.
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| 650 |
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|a Photovoltaic Conversion.
|2 local.
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| 650 |
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7 |
|a Thin Films.
|2 local.
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| 650 |
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7 |
|a Copper Selenides.
|2 local.
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| 650 |
|
7 |
|a Solar Energy.
|2 edbsc.
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| 710 |
2 |
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|a National Renewable Energy Laboratory (U.S.).
|4 res.
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| 710 |
2 |
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|a University of Colorado Boulder.
|4 res.
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| 710 |
1 |
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|a United States.
|b Department of Energy.
|4 spn.
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| 710 |
1 |
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|a United States.
|b Department of Energy.
|b Office of Scientific and Technical Information.
|4 dst.
|
| 856 |
4 |
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|u http://www.osti.gov/servlets/purl/10175313-ZvncuK/webviewable/
|z Online Access
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| 907 |
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|a .b59629149
|b 03-06-23
|c 05-26-10
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| 998 |
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|a web
|b 05-26-10
|c f
|d m
|e p
|f eng
|g dcu
|h 0
|i 1
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| 956 |
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|a Information bridge
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|s 1eb76234-13f5-54d3-9b29-353c290b9cd2
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| 952 |
f |
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|p Can circulate
|a University of Colorado Boulder
|b Online
|c Online
|d Online
|e E 1.99:nrel/tp--451-5014
|h Superintendent of Documents classification
|i web
|n 1
|
