Dynamics of lattice damage accumulation for MeV ions in silicon

Dynamics of lattice damage accumulation for MeV ions in silicon [electronic resource]

Although the domination of electronic stopping over nuclear stopping may be regarded as an important practical advantage for high energy (MeV) ion processing, exact knowledge of the doping introduced into the active regions as well as of the process-associated defects and their thermal stability is...

Full description

Saved in:
Bibliographic Details
Online Access: Online Access
Corporate Author: Oak Ridge National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Defense ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1991.
Subjects:
Scattering.
Silicon Ions.
Beam Currents.
Damage.
Energy Range.
Radiation Effects.
Temperature Dependence.
Ion Implantation.
Elements.
Erbium Ions.
Currents.
Microscopy.
Crystal Lattices.
Backscattering.
Semimetals.
Energy Losses.
Crystal Structure.
Silicon.
Electron Microscopy.
Oxygen Ions.
Charged Particles.
Mev Range.
Physical Radiation Effects.
Transmission Electron Microscopy.
Ions.
Losses.
Condensed Matter Physics, Superconductivity And Superfluidity.

Internet

Online Access

Online

Holdings details from Online
Call Number: E 1.99:conf-910580-1
E 1.99:conf-910580-1 Available

Similar Items