Solution Deposition Approaches To Coated Conductor Fabrication on Biaxially Textured Ni-W Alloy Substrates [electronic resource]

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Bibliographic Details
Online Access: Online Access (via OSTI)
Corporate Author: Oak Ridge National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2001.
Subjects:

MARC

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245 0 0 |a Solution Deposition Approaches To Coated Conductor Fabrication on Biaxially Textured Ni-W Alloy Substrates  |h [electronic resource] 
260 |a Washington, D.C. :  |b United States. Department of Energy ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,  |c 2001. 
300 |a vp. :  |b digital, PDF file. 
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338 |a online resource  |b cr  |2 rdacarrier. 
500 |a Published through SciTech Connect. 
500 |a 06/20/2001. 
500 |a "p01-110936" 
500 |a 2001 ISTEC/MRS International Workshop on Superconductivity, Honolulu, HI (US), 06/23/2001--06/28/2001. 
500 |a Sathyamurthy, S. 
520 3 |a Sol-gel processing of La₂Zr₂O₇ (LZO) was used to process buffer layers on biaxially textured Ni-3 at.%W substrates. A reel-to-reel continuous dip-coating unit was used to deposit the solution buffers. Epitaxial LZO films have been obtained through continuous processing on Ni-3 at.%W substrates with strong texture and uniform microstructure. The carbon content in these films were analyzed using proton resonance Rutherford Backscattering (RBS). The process parameters have been modified so as to study the effect of the carbon content in these films towards further growth of YBCO films with better properties. The LZO buffers were used as seed layers for RABiTS with the architecture of CeO₂/YSZ/LZO/Ni-3 at.%W, and YBCO films with critical current density (J{sub c}) of 1.9 MA/cm² at 77K in self-field, and a J{sub c} of 0.34 MA/cm² at 0.5 T, have been obtained. 
536 |b AC05-00OR22725. 
650 7 |a Sol-Gel Process.  |2 local. 
650 7 |a Lanthanum Oxides.  |2 local. 
650 7 |a Zirconium Oxides.  |2 local. 
650 7 |a Nickel Base Alloys.  |2 local. 
650 7 |a Tungsten Alloys.  |2 local. 
650 7 |a Critical Current.  |2 local. 
650 7 |a Dip Coating.  |2 local. 
650 7 |a Fabrication.  |2 local. 
650 7 |a Substrates.  |2 local. 
650 7 |a Superconductivity.  |2 local. 
650 7 |a Texture.  |2 local. 
650 7 |a Microstructure.  |2 local. 
650 7 |a Cerium Oxides.  |2 local. 
650 7 |a Yttrium Oxides.  |2 local. 
650 7 |a Barium Oxides.  |2 local. 
650 7 |a Copper Oxides.  |2 local. 
650 7 |a Materials Science.  |2 edbsc. 
710 2 |a Oak Ridge National Laboratory.  |4 res. 
710 1 |a United States.  |b Department of Energy.  |4 spn. 
710 1 |a United States.  |b Department of Energy.  |b Office of Scientific and Technical Information.  |4 dst. 
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