Temperature dependence of the interface moments in Co2MnSi thin films [electronic resource]

Xmcd Cms Tmr Tey Xas Icp.

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Bibliographic Details
Online Access: Online Access
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008.
Subjects:

MARC

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245 0 0 |a Temperature dependence of the interface moments in Co2MnSi thin films  |h [electronic resource] 
260 |a Berkeley, Calif. :  |b Lawrence Berkeley National Laboratory ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,  |c 2008. 
336 |a text  |b txt  |2 rdacontent. 
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500 |a Published through the Information Bridge: DOE Scientific and Technical Information. 
500 |a 03/15/2008. 
500 |a "lbnl-257e" 
500 |a APPLIED PHYSICS LETTERS 92 ISSN 0003-6951; APPLAB FT. 
500 |a Miyazaki, T.; Ando, Y.; Arenholz, E.; van der Laan, G.; Sakuraba, Y.; Arenholz, Elke; Telling, N.; Hicken, R.; Oogane, M.; Keatley, P.; Shelford, L. 
500 |a Advanced Light Source Division. 
520 3 |a X-ray magnetic circular dichroism (XMCD) is utilized to explore the temperature dependence of the interface moments in Co₂MnSi (CMS) thin films capped with aluminium. By increasing the thickness of the capping layer we demonstrate enhanced interface sensitivity of the measurements and the existence of a thin Mn oxide layer at the CMS/Al interface even when a thick capping layer is used. We show that for well ordered L2₁ CMS films there is no significant variation in either the Co or Mn interface moments as a function of temperature. However, a dramatic reduction in the interface moments at low temperature is observed in a disordered CMS film that is likely to be caused by increased Mn-Mn antiferromagnetic coupling. It is suggested that for ordered L2₁ CMS films the temperature dependence of the tunneling magnetoresistance is not related to changes in the interface moments. However, the existence of residual Mn oxide at the CMS/barrier interface could be a contributing factor. 
520 0 |a Xmcd Cms Tmr Tey Xas Icp. 
536 |b DE-AC02-05CH11231. 
650 7 |a Thickness.  |2 local. 
650 7 |a Sensitivity.  |2 local. 
650 7 |a Magnetoresistance.  |2 local. 
650 7 |a Temperature Dependence.  |2 local. 
650 7 |a Tunneling.  |2 local. 
650 7 |a Oxides.  |2 local. 
650 7 |a Magnetic Circular Dichroism.  |2 local. 
650 7 |a Thin Films.  |2 local. 
650 7 |a Aluminium.  |2 local. 
710 2 |a Lawrence Berkeley National Laboratory.  |4 res. 
710 1 |a United States.  |b Department of Energy.  |b Office of Scientific and Technical Information.  |4 dst. 
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