Direct detector for terahertz radiation [electronic resource]

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Bibliographic Details
Online Access: Online Access (via OSTI)
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2008.
Subjects:

MARC

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245 0 0 |a Direct detector for terahertz radiation  |h [electronic resource] 
260 |a Washington, D.C. :  |b United States. Department of Energy ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,  |c 2008. 
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500 |a Published through SciTech Connect. 
500 |a 09/02/2008. 
500 |a "7,420,225" 
500 |a "US patent application 11/290,090" 
500 |a Wanke, Michael C. (Albuquerque, NM); Lee, Mark (Albuquerque, NM); Shaner, Eric A. (Albuquerque, NM); Allen, S. James (Santa Barbara, CA) 
520 3 |a A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution. 
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