Enhanced superconducting pairing interaction in indium-doped tin telluride [electronic resource]
Matsci.
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Online Access |
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Corporate Author: | |
Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2010.
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Summary: | Matsci. |
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Abstract: | The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10²¹ cm⁻³. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities. |
Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 05/03/2010. "slac-pub-14045" Submitted to Physical Review B FT. Erickson, A.S. |