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|a Methods for forming particles from single source precursors
|h [electronic resource]
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|a Washington, D.C. :
|b United States. Department of Energy. ;
|a Oak Ridge, Tenn. :
|b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
|c 2011.
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|a text
|b txt
|2 rdacontent.
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|a Published through SciTech Connect.
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|a 08/23/2011.
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|a "8,003,070"
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|a "US patent application 12/047,956"
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|a Fox, Robert V. (Idaho Falls, ID); Rodriguez, Rene G. (Pocatello, ID); Pak, Joshua (Pocatello, ID)
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|a Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
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|b AC07-05ID14517.
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|a Materials Science.
|2 edbsc.
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|a Battelle Memorial Institute.
|4 res.
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|a United States.
|b Department of Energy.
|4 spn.
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|a United States.
|b Department of Energy.
|b Office of Scientific and Technical Information.
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|u http://www.osti.gov/scitech/biblio/1024113
|z Online Access (via OSTI)
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|a .b70730507
|b 03-09-23
|c 04-04-12
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|a University of Colorado Boulder
|b Online
|c Online
|d Online
|e E 1.99:8,003,070
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