Investigation of defects in GaAsP superlattice structures / M.M. Al-Jassim, K.M. Jones ; Solar Energy Research Institute ; prepared for the U.S. Department of Energy.
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| Corporate Authors: | , |
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| Other title: | Investigation of defects in gallium arsenide. |
| Format: | Government Document Book |
| Language: | English |
| Published: |
Golden, Colo. :
Solar Energy Research Institute,
1985.
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| Abstract: | GaAsP superlattices have been incorporated in GaAs/GaAsP cascade solar cell structures in an attempt to reduce the dislocation density in the high band gap cell. The structures were grown on GaAs substrates by MOCVD. Defects and irregularities in these structures were investigated by TEM, EBIC, X-ray microanalysis and chemical etching. |
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| Item Description: | "SERI/title page-212-2753."--Cover. "June 1985."--Cover. "Prepared for the 4th Conference on Microscopy of Semiconductor Materials, Oxford, England, March 1985."--Cover. |
| Physical Description: | 6 pages : illustrations ; 28 cm. |
| Bibliography: | Includes bibliographical references (page 6) |
| Action Note: | committed to retain |
| Funding Information Note: | Prepared under task no. FTP no. 521. Contract no. |