Investigation of defects in GaAsP superlattice structures / M.M. Al-Jassim, K.M. Jones ; Solar Energy Research Institute ; prepared for the U.S. Department of Energy.

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Bibliographic Details
Main Author: Al-Jassim, Mowafak
Corporate Authors: Solar Energy Research Institute, United States. Department of Energy
Other Authors: Jones, K. M.
Other title:Investigation of defects in gallium arsenide.
Format: Government Document Book
Language:English
Published: Golden, Colo. : Solar Energy Research Institute, 1985.
Subjects:

MARC

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245 1 0 |a Investigation of defects in GaAsP superlattice structures /  |c M.M. Al-Jassim, K.M. Jones ; Solar Energy Research Institute ; prepared for the U.S. Department of Energy. 
246 3 |a Investigation of defects in gallium arsenide. 
260 |a Golden, Colo. :  |b Solar Energy Research Institute,  |c 1985. 
300 |a 6 pages :  |b illustrations ;  |c 28 cm. 
336 |a text  |b txt  |2 rdacontent. 
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500 |a "SERI/title page-212-2753."--Cover. 
500 |a "June 1985."--Cover. 
500 |a "Prepared for the 4th Conference on Microscopy of Semiconductor Materials, Oxford, England, March 1985."--Cover. 
504 |a Includes bibliographical references (page 6) 
520 3 |a GaAsP superlattices have been incorporated in GaAs/GaAsP cascade solar cell structures in an attempt to reduce the dislocation density in the high band gap cell. The structures were grown on GaAs substrates by MOCVD. Defects and irregularities in these structures were investigated by TEM, EBIC, X-ray microanalysis and chemical etching. 
536 |a Prepared under task no.  |g 3447.10. 
536 |a FTP no. 521. 
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650 0 |a Solar cells  |x Research. 
650 0 |a Gallium arsenide.  |0 http://id.loc.gov/authorities/subjects/sh95005279. 
650 0 |a Metal organic chemical vapor deposition.  |0 http://id.loc.gov/authorities/subjects/sh00005424. 
650 0 |a Photovoltaic cells.  |0 http://id.loc.gov/authorities/subjects/sh89006119. 
700 1 |a Jones, K. M. 
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