Description
Abstract:The primary objectives of this project are twofold: (i) to investigate new amorphous semiconductor (a-Sc) materials, in which recombination centers are passivated, using plasma deposition techniques; and (ii) to characterize the optoelectronic properties pertaining to both majority-carrier and minority-carrier transport in as-deposited films and in devices. The specific goals in FY 1980 are: (i) to continue investigations of the effects of atmospheric impurities, i.e., nitrogen and oxygen, on the optoelectronic properties of a-Si:H alloys; and (ii) to initiate a study of the effects of these impurities upon the photovoltaic conversion efficiencies of diagnostic devices that are fabricated using such alloys. The following activities were emphasized in the program: (i) an expansion of plasma studies using optical emission spectroscopy in order to identify emitting reactive species due to impurities; and (ii) electrical and optical measurements on alloys with calibrated impurity levels by measurments of photoconductivity, photoluminescence, vibrational spectroscopy, etc.; and (iii) completing the apparatus for device measurements of spectral response, dark I-V characteristics, illuminated I-V characteristics, etc. Associated with the last activity, the fabrication of solar cells was begun using low-impurity a-Si:H materials and various a-Si:(H,O,N) alloys. Progress is reported. (WHK)
Item Description:Published through SciTech Connect.
01/01/1980.
"bnl-51260"
Vanier, P.E.; Delahoy, A.E.; Griffith, R.W.; Hirsch, M.D.; Kampas, F.J.
Physical Description:Pages: 38 : digital, PDF file.