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|a (TOE)ost6884895
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|a (TOE)6884895
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|a TOE
|c TOE
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|a GDWR
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|a 14
|2 edbsc
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|a 36
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|a E 1.99:bnl-51260
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|a E 1.99:bnl-51260
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|a bnl-51260
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|a Advanced amorphous materials for photovoltaic conversion. Semiannual report, October 1, 1979-March 31, 1980
|h [electronic resource]
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|a Upton, N.Y. :
|b Brookhaven National Laboratory ;
|a Oak Ridge, Tenn. :
|b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
|c 1980.
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|a Pages: 38 :
|b digital, PDF file.
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|a text
|b txt
|2 rdacontent.
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|a computer
|b c
|2 rdamedia.
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|a online resource
|b cr
|2 rdacarrier.
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|a Published through SciTech Connect.
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|a 01/01/1980.
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|a "bnl-51260"
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|a Vanier, P.E.; Delahoy, A.E.; Griffith, R.W.; Hirsch, M.D.; Kampas, F.J.
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|a The primary objectives of this project are twofold: (i) to investigate new amorphous semiconductor (a-Sc) materials, in which recombination centers are passivated, using plasma deposition techniques; and (ii) to characterize the optoelectronic properties pertaining to both majority-carrier and minority-carrier transport in as-deposited films and in devices. The specific goals in FY 1980 are: (i) to continue investigations of the effects of atmospheric impurities, i.e., nitrogen and oxygen, on the optoelectronic properties of a-Si:H alloys; and (ii) to initiate a study of the effects of these impurities upon the photovoltaic conversion efficiencies of diagnostic devices that are fabricated using such alloys. The following activities were emphasized in the program: (i) an expansion of plasma studies using optical emission spectroscopy in order to identify emitting reactive species due to impurities; and (ii) electrical and optical measurements on alloys with calibrated impurity levels by measurments of photoconductivity, photoluminescence, vibrational spectroscopy, etc.; and (iii) completing the apparatus for device measurements of spectral response, dark I-V characteristics, illuminated I-V characteristics, etc. Associated with the last activity, the fabrication of solar cells was begun using low-impurity a-Si:H materials and various a-Si:(H,O,N) alloys. Progress is reported. (WHK)
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|b AC02-76CH00016.
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|a Information.
|2 local.
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|a Experimental Data.
|2 local.
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|a Deposition.
|2 local.
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|a Plasma Arc Spraying.
|2 local.
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|a Direct Energy Converters.
|2 local.
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|a Equipment.
|2 local.
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|a Solar Equipment.
|2 local.
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|a Physical Properties.
|2 local.
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|a Photoluminescence.
|2 local.
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|a Hydrogen Additions.
|2 local.
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|a Mobility.
|2 local.
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|a Charge Carriers.
|2 local.
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|a Elements.
|2 local.
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|a Spray Coating.
|2 local.
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|a Emission Spectroscopy.
|2 local.
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|a Solar Cells.
|2 local.
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|a Optical Properties.
|2 local.
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|a Electrical Properties.
|2 local.
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|a Materials.
|2 local.
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|a Spectroscopy.
|2 local.
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|a Semimetals.
|2 local.
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|a Silicon Solar Cells.
|2 local.
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|a Charge Transport.
|2 local.
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|a Numerical Data.
|2 local.
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|a Amorphous State.
|2 local.
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|a Silicon.
|2 local.
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|a Graphs.
|2 local.
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|a Photoconductivity.
|2 local.
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|a Surface Coating.
|2 local.
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|a Photoelectric Cells.
|2 local.
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|a Impurities.
|2 local.
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|a Semiconductor Materials.
|2 local.
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|a Photovoltaic Cells.
|2 local.
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|a Electric Conductivity.
|2 local.
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|a Luminescence.
|2 local.
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|a Carrier Mobility.
|2 local.
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|a Data.
|2 local.
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|a Spectral Response.
|2 local.
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|a Materials Science.
|2 edbsc.
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|a Solar Energy.
|2 edbsc.
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|a Alabama A & M University.
|4 res.
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|a Brookhaven National Laboratory.
|4 res.
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1 |
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|a United States.
|b Department of Energy.
|b Office of Scientific and Technical Information.
|4 dst.
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|u http://www.osti.gov/servlets/purl/6884895/
|z Online Access
|
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|a .b77102113
|b 03-07-23
|c 04-22-14
|
998 |
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|a web
|b 04-22-14
|c f
|d m
|e p
|f eng
|g nyu
|h 0
|i 1
|
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|a Information bridge
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|i 56a512f3-8bd0-5574-9978-d2493e9b21f3
|s 9e08e096-d6a4-5c24-8bdf-6ba19dd45a99
|
952 |
f |
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|p Can circulate
|a University of Colorado Boulder
|b Online
|c Online
|d Online
|e E 1.99:bnl-51260
|h Superintendent of Documents classification
|i web
|n 1
|