Process for growing a film epitaxially upon a MGO surface and structures formed with the process [electronic resource]
Process; Growing; Film; Epitaxially; Mgo; Surface; Structures; Formed; Process; Process; Structure; Optical; Quality; Perovskites; Batio; Srtio; Grown; Single; Crystal; Mgo; Substrate; Involves; Epitaxial; Build; Alternating; Planes; Metal; Oxide; Plane; Grown; Mgo; Substrate; Plane; Layering; Seque...
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Online Access |
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| Main Authors: | , |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Oak Ridge, Tenn. : Oak Ridge, Tenn. :
Oak Ridge National Laboratory. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1998.
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| 245 | 0 | 0 | |a Process for growing a film epitaxially upon a MGO surface and structures formed with the process |h [electronic resource] |
| 260 | |a Oak Ridge, Tenn. : |b Oak Ridge National Laboratory. ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, |c 1998. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a Published through SciTech Connect. | ||
| 500 | |a 01/01/1998. | ||
| 500 | |a "us 5846667" | ||
| 500 | |a Walker, Frederick Joseph; McKee, Rodney Allen. | ||
| 520 | 3 | |a A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications. | |
| 520 | 0 | |a Process; Growing; Film; Epitaxially; Mgo; Surface; Structures; Formed; Process; Process; Structure; Optical; Quality; Perovskites; Batio; Srtio; Grown; Single; Crystal; Mgo; Substrate; Involves; Epitaxial; Build; Alternating; Planes; Metal; Oxide; Plane; Grown; Mgo; Substrate; Plane; Layering; Sequence; Involved; Film; Build; Reduces; Otherwise; Result; Interfacial; Electrostatics; Atomic; Layers; Oxides; Stabilized; Commensurate; Films; Unit; Cell; Thickness; Grown; Crystal; Quality; Thicknesses; 5-0; Optical; Device; Applications; Structures Formed; Atomic Layers; Cell Thickness; Sequence Involved; Crystal Quality; Layering Sequence; Device Applications; Metal Oxide; Single Crystal; Optical Device; Otherwise Result; Unit Cell; Optical Quality; Mgo Substrate; Mgo Substrate; Epitaxial Build; Interfacial Electrostatics; Film Build; Film Epitaxially; Quality Perovskites; Mgo Surface; Substrate Involves; Alternating Planes; Crystal Mgo. | |
| 700 | 1 | |a Walker, Frederick Joseph |4 aut. | |
| 700 | 1 | |a McKee, Rodney Allen |4 aut. | |
| 710 | 2 | |a Oak Ridge National Laboratory. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
| 856 | 4 | 0 | |u http://www.osti.gov/servlets/purl/872023/ |z Online Access |
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