Process for growing a film epitaxially upon an oxide surface and structures formed with the process [electronic resource]
Process; Growing; Film; Epitaxially; Oxide; Surface; Structures; Formed; Process; Process; Structure; Film; Comprised; Perovskite; Spinel; Built; Epitaxially; Surface; Alkaline; Earth; Oxide; Surface; Involves; Epitaxial; Build; Alternating; Constituent; Metal; Oxide; Planes; Perovskite; Spinel; Lay...
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Online Access |
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| Main Authors: | , |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Oak Ridge, Tenn. : Oak Ridge, Tenn. :
Oak Ridge National Laboratory. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1995.
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| 245 | 0 | 0 | |a Process for growing a film epitaxially upon an oxide surface and structures formed with the process |h [electronic resource] |
| 260 | |a Oak Ridge, Tenn. : |b Oak Ridge National Laboratory. ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, |c 1995. | ||
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| 500 | |a Published through SciTech Connect. | ||
| 500 | |a 01/01/1995. | ||
| 500 | |a "us 5450812" | ||
| 500 | |a Walker, Frederick J.; McKee, Rodney A. | ||
| 520 | 3 | |a A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications. | |
| 520 | 0 | |a Process; Growing; Film; Epitaxially; Oxide; Surface; Structures; Formed; Process; Process; Structure; Film; Comprised; Perovskite; Spinel; Built; Epitaxially; Surface; Alkaline; Earth; Oxide; Surface; Involves; Epitaxial; Build; Alternating; Constituent; Metal; Oxide; Planes; Perovskite; Spinel; Layer; Metal; Oxide; Built; Surface; Metal; Element; Provides; Cation; Crystalline; Structure; Perovskite; Spinel; Layer; Metal; Oxide; Built; Surface; Metal; Element; Provides; Cation; Crystalline; Structure; Perovskite; Spinel; Layering; Sequence; Involved; Film; Build; Reduces; Otherwise; Result; Interfacial; Electrostatics; Atomic; Layers; Oxides; Stabilized; Commensurate; Films; Unit; Cell; Thickness; Grown; Crystal; Quality; Thicknesses; 5-0; Optical; Device; Applications; Structures Formed; Atomic Layers; Oxide Built; Oxide Built; Cell Thickness; Sequence Involved; Crystal Quality; Layering Sequence; Oxide Surface; Oxide Surface; Earth Oxide; Device Applications; Metal Element; Metal Element; Metal Oxide; Metal Oxide; Metal Oxide; Alkaline Earth; Optical Device; Crystalline Structure; Crystalline Structure; Otherwise Result; Unit Cell; Built Epitaxially; Oxide Planes; Alternating Constituent; Epitaxial Build; Interfacial Electrostatics; Film Build; Film Epitaxially; Film Comprised; Constituent Metal; Line Structure; Line Structure. | |
| 700 | 1 | |a Walker, Frederick J. |4 aut. | |
| 700 | 1 | |a McKee, Rodney A. |4 aut. | |
| 710 | 2 | |a Oak Ridge National Laboratory. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
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