Visible light laser voltage probing on thinned substrates [electronic resource]

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Bibliographic Details
Online Access: Online Access (via OSTI)
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2017.
Subjects:

MARC

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245 0 0 |a Visible light laser voltage probing on thinned substrates  |h [electronic resource] 
260 |a Washington, D.C. :  |b United States. Department of Energy. ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,  |c 2017. 
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500 |a Published through SciTech Connect. 
500 |a 03/21/2017. 
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500 |a Joshua Beutler; John Joseph Clement; Mary A. Miller; Jeffrey Stevens; Edward I. Cole, Jr. 
520 3 |a The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation. 
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710 2 |a Sandia National Laboratories.  |4 res. 
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