Anisotropic strain induced directional metallicity in highly epitaxial LaBaCo<sub>2</sub>O<sub>5.5+δ</sub> thin films on (110) NdGaO<sub>3</sub> [electronic resource]

Electronic Properties And Materials; Magnetic Properties And Materials.

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Bibliographic Details
Online Access: Online Access (via OSTI)
Corporate Author: Rensselaer Polytechnic Institute (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2016.
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Summary:Electronic Properties And Materials; Magnetic Properties And Materials.
Abstract:Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo<sub>2</sub>O<sub>5.5+δ</sub> films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Lastly, our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.
Item Description:Published through SciTech Connect.
11/21/2016.
": BFsrep37337"
Scientific Reports 6 1 ISSN 2045-2322 AM.
Chunrui Ma; Dong Han; Ming Liu; Gregory Collins; Haibin Wang; Xing Xu; Yuan Lin; Jiechao Jiang; Shengbai Zhang; Chonglin Chen.
Univ. of Texas, San Antonio, TX (United States)
Physical Description:7 p. : digital, PDF file.