Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories [electronic resource]
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| Online Access: |
Online Access (via OSTI) |
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| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy. Office of Basic Energy Sciences ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2014.
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| Abstract: | Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ̃50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device. |
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| Item Description: | Published through SciTech Connect. 10/05/2014. "105608" 226th Electrochemical Society Meeting, 10/05/14 - 10/10/14, Cancun, Mexico. Heinonen, O. |