Review—hexagonal boron nitride epilayers [electronic resource] : Growth, optical properties and device applications.
Wide Bandgap Semiconductors;Boron Nitride;Solid-State Deep Uv And Neutron Detectors;Detectors;Hexagonal Boron Nitride;Mocvd;Optical Properties Of Semiconductors;Pholuminescence.
Saved in:
| Online Access: |
Online Access (via OSTI) |
|---|---|
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. National Nuclear Security Administration ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2016.
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| Subjects: |
MARC
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| 245 | 0 | 0 | |a Review—hexagonal boron nitride epilayers |h [electronic resource] : |b Growth, optical properties and device applications. |
| 260 | |a Washington, D.C. : |b United States. National Nuclear Security Administration ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, |c 2016. | ||
| 300 | |a p. Q3012-Q3021 : |b digital, PDF file. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a Published through SciTech Connect. | ||
| 500 | |a 09/07/2016. | ||
| 500 | |a ECS Journal of Solid State Science and Technology 6 2 ISSN 2162-8769 AM. | ||
| 500 | |a H. X. Jiang; Jing Yu Lin. | ||
| 500 | |a Texas Tech Univ., Lubbock, TX (United States) | ||
| 520 | 3 | |a This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices. | |
| 520 | 0 | |a Wide Bandgap Semiconductors;Boron Nitride;Solid-State Deep Uv And Neutron Detectors;Detectors;Hexagonal Boron Nitride;Mocvd;Optical Properties Of Semiconductors;Pholuminescence. | |
| 536 | |b NA0002927. | ||
| 650 | 7 | |a Materials Science. |2 edbsc. | |
| 710 | 1 | |a United States. |b National Nuclear Security Administration. |4 spn. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
| 856 | 4 | 0 | |u http://www.osti.gov/scitech/biblio/1330681 |z Online Access (via OSTI) |
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