Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films [electronic resource]
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Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy. Office of Basic Energy Sciences ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2016.
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Abstract: | Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in hetero-interfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> are strongly coupled to polar interfaces through the formation of ½<101>{h0l} type crystallographic shear planes (CSPs). Using atomic resolution imaging and spectroscopy we illustrate that the CSPs consist of both conservative and nonconservative segments when coupled to the CDWs, where necessary compensating charges for stabilizing the CDWs are associated with vacancies at the CSPs. Lasly, the CDW/CSP coupling yields an atomically narrow domain walls, consisting of a single atomic layer of oxygen. This study shows that the CDW/CSP coupling is a fascinating venue to develop emergent material properties. |
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Item Description: | Published through SciTech Connect. 09/02/2016. "bnl--113190-2016-ja" "KC0201010" Physical Review B 94 10 ISSN 2469-9950; PRBMDO AM. Myung-Geun Han; Joseph A. Garlow; Matthieu Bugnet; Simon Divilov; Matthew S. J. Marshall; Lijun Wu; Matthew Dawber; Marivi Fernandez-Serra; Gianluigi A. Botton; Sang-Wook Cheong; Frederick J. Walker; Charles H. Ahn; Yimei Zhu. Gordon and Betty Moore Foundation. |
Physical Description: | Article No. 100101 : digital, PDF file. |