Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / Jon C. Freeman.
Saved in:
| Main Author: | |
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| Format: | Government Document Microfilm Book |
| Language: | English |
| Published: |
Cleveland, Ohio :
National Aeronautics and Space Administration, Glenn Research Center,
February 2003.
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| Series: | NASA technical memorandum ;
2003-211983. |
| Subjects: |
Norlin Library - Government Information - Microform
| Call Number: |
NAS 1.15:211983
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|---|---|
| NAS 1.15:211983 | Restricted Place a Hold |