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0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) four-junction solar cell [electronic resource] : preprint / D.J. Friedman ... [and others]

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Bibliographic Details
Online Access:	Online Access Online Access
Corporate Author:	National Renewable Energy Laboratory (U.S.)
Other Authors:	Friedman, Daniel J. (Daniel Joseph)
Other title:	Seven tenths electron volt gallium indium arsenide junction.
Format:	Government Document Electronic eBook
Language:	English
Published:	Golden, CO : National Renewable Energy Laboratory, [2006]
Series:	Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-520-39913.
Subjects:	Solar cells > Design and construction. Photovoltaic cells > Research. Gallium arsenide semiconductors.

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Call Number:	E 9.17:NREL/CP-520-39913
E 9.17:NREL/CP-520-39913	Available