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Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices [electronic resource]

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Bibliographic Details
Online Access:	Online Access
Corporate Author:	Knolls Atomic Power Laboratory (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Washington, DC : Oak Ridge, Tenn. : United States. Office of the Assistant Secretary for Nuclear Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1997.
Subjects:	Thermophotovoltaic Converters. Semiconductor Materials. Gallium Antimonides. Indium Antimonides. Gallium Arsenides. Indium Arsenides. Epitaxy. Crystal Doping. Optical Properties. Electrical Properties. Microstructure. Experimental Data. Materials Science ;30 Direct Energy Conversion.

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Call Number:	E 1.99:K--97063;CONF-9705119--
E 1.99:K--97063;CONF-9705119--	Available