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Lithium-ion drifting [electronic resource] : Application to the study of point defects in floating-zone silicon.

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Bibliographic Details
Online Access:	Online Access
Corporate Authors:	Lawrence Berkeley Laboratory (Researcher), Lawrence Berkeley National Laboratory (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Washington, D.C. : Oak Ridge, Tenn. : United States. National Aeronautics and Space Administration ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1997.
Subjects:	Silicon. Point Defects. Ion Drift. Lithium Ions. P-type Conductors. Gettering. Calculation Methods. Materials Science ;99 Mathematics, Computers, Information Science, Management, Law, Miscellaneous.

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Call Number:	E 1.99:CONF-970517--7
E 1.99:CONF-970517--7	Available