Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O₃ films [electronic resource]

Saved in:
Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Albuquerque, N.M. : Oak Ridge, Tenn. : Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993.
Subjects:

MARC

LEADER 00000nam a22000003u 4500
001 b5950528
003 CoU
005 20100212000000.0
006 m d f
007 cr un
008 100524e19930701nmu s| f1|||||eng|d
035 |a (TOE)ost10176273 
035 |a (TOE)10176273 
040 |a TOE  |c TOE 
049 |a GDWR 
072 7 |a 36  |2 edbsc 
086 0 |a E 1.99: conf-930405--33 
086 0 |a E 1.99:sand--93-0541c 
086 0 |a E 1.99: conf-930405--33 
245 0 0 |a Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O₃ films  |h [electronic resource] 
260 |a Albuquerque, N.M. :  |b Sandia National Laboratories. ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,  |c 1993. 
300 |a 12 p. :  |b digital, PDF file. 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
500 |a Published through the Information Bridge: DOE Scientific and Technical Information. 
500 |a 07/01/1993. 
500 |a "sand--93-0541c" 
500 |a " conf-930405--33" 
500 |a "DE93017496" 
500 |a Spring meeting of the Materials Research Society,San Francisco, CA (United States),12-16 Apr 1993. 
500 |a Warren, W.L.; Tuttle, B.A.; Dimos, D. 
500 |a USDOE, Washington, DC (United States);Department of Defense, Washington, DC (United States) 
520 3 |a Photo-induced changes in the hysteresis behavior of sol-gel derived Pb(Zr,Ti)O₃ (PZT) and (Pb,La)(Zr,Ti)O₃ (PLZT) films have been characterized. Film photosensitivity has been evaluated with respect to magnitude of effects, time response and spectral dependence. Photo-induced hysteresis changes exhibit a stretched-exponential time dependence, which implies a dispersive mechanism. The spectral dependence is strongly peaked at the band edge (∼ 3.4 eV), which indicates that generation of electron-hole pairs in the material is critical. The photo-induced hysteresis changes are reproducible and stable, which indicates that the controlling charge traps are stable. However, improvements in film photosensitivity will be required to develop these materials for optical memory applications. 
536 |b AC04-76DP00789. 
650 7 |a Hysteresis.  |2 local. 
650 7 |a Photosensitivity.  |2 local. 
650 7 |a Plzt.  |2 local. 
650 7 |a Electro-optical Effects.  |2 local. 
650 7 |a Memory Devices.  |2 local. 
650 7 |a Films.  |2 local. 
650 7 |a Pzt.  |2 local. 
650 7 |a Materials Science.  |2 edbsc. 
710 2 |a Sandia National Laboratories.  |4 res. 
710 1 |a United States.  |b Department of Energy.  |b Office of Scientific and Technical Information.  |4 dst. 
856 4 0 |u http://www.osti.gov/servlets/purl/10176273-XuqRPX/  |z Online Access 
907 |a .b5950528x  |b 03-06-23  |c 05-25-10 
998 |a web  |b 05-25-10  |c f  |d m   |e p  |f eng  |g nmu  |h 0  |i 1 
956 |a Information bridge 
999 f f |i 9130ea5d-a859-5eda-a564-0d19a7db6be1  |s 6274897e-273b-50f8-af98-d2f50bb06359 
952 f f |p Can circulate  |a University of Colorado Boulder  |b Online  |c Online  |d Online  |e E 1.99: conf-930405--33  |h Superintendent of Documents classification  |i web  |n 1