Cover Image

Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser. [Implanted with 100 keV /sup 75/As and /sup 121/Sb] [electronic resource]

Saved in:

Bibliographic Details
Online Access:	Online Access
Main Authors:	Pronko, P.P (Author), Young, R.T (Author), Appleton, B.R (Author), White, C.W (Author), Wilson, S.R (Author)
Corporate Author:	Oak Ridge National Laboratory (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Oak Ridge, Tenn. : Oak Ridge, Tenn. : Oak Ridge National Laboratory. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1978.
Subjects:	Silicon. Ion Implantation. Annealing. Antimony 121. Antimony Ions. Arsenic 75. Arsenic Ions. Crystal Doping. Doped Materials. Lasers. Lattice Parameters. Antimony Isotopes. Arsenic Isotopes. Atomic Ions. Charged Particles. Elements. Heat Treatments. Intermediate Mass Nuclei. Ions. Isomeric Transition Isotopes. Isotopes. Nuclei. Radioisotopes. Seconds Living Radioisotopes. Semimetals. Odd-Even Nuclei. Stable Isotopes. Materials Science.

Internet

Online Access

Online

Holdings details from Online
Call Number:	E 1.99:conf-781167-3
E 1.99:conf-781167-3	Available