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Modifications in Optoelectronic Behavior of Plasma-Deposited Amorphous Semiconductor Alloys Via Impurity Incorporation [electronic resource]

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Bibliographic Details
Online Access:	Online Access
Corporate Author:	Brookhaven National Laboratory (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1979.
Subjects:	Silicon Alloys. Photoconductivity. Annealing. Epitaxy. Experimental Data. Films. Graphs. Impurities. Photoluminescence. Silanes. Temperature Dependence. Alloys. Data. Data Forms. Electric Conductivity. Electrical Properties. Heat Treatments. Hydrides. Hydrogen Compounds. Information. Luminescence. Numerical Data. Physical Properties. Silicon Compounds. Materials Science.

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Call Number:	E 1.99: conf-790851-3
E 1.99: conf-790851-3	Available