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Comparison of effects of pulsed Ruby laser and pulsed electron beam annealing of <sup>75</sup>AS<sup>+</sup> implanted silicon [electronic resource]

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Bibliographic Details
Online Access:	Online Access
Corporate Author:	Oak Ridge National Laboratory (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1978.
Subjects:	Silicon. Ion Channeling. Ion Implantation. Annealing. Arsenic 75. Electron Beams. Melting. Recrystallization. Arsenic Isotopes. Crystal-Phase Transformations. Channeling. Elements. Heat Treatments. Isomeric Transition Isotopes. Lasers. Isotopes. Lepton Beams. Nuclei. Beams. Intermediate Mass Nuclei. Particle Beams. Phase Transformations. Radioisotopes. Seconds Living Radioisotopes. Semimetals. Odd-Even Nuclei. Stable Isotopes. Materials Science.

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Call Number:	E 1.99:conf-781121--21
E 1.99:conf-781121--21	Available